H01H14D MOSFET. Datasheet pdf. Equivalent
Type Designator: H01H14D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 330 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 140 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 914 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
Package: D2PAK
H01H14D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H01H14D Datasheet (PDF)
h01h14b h01h14d.pdf
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H01H14D/BN-Channel MOSFET140A,100V, N H TO-263H01H14BNCE01H14D HAOHAI 800Pcs 8000PcsH01H14DD2PAKH01H14B Series Pin AssignmentID=140ADESCRIPTIONVDS=100VThe H01H14BH01H14DRDS(on)=5.5muses advanced t
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
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MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100