All MOSFET. H01P13D Datasheet

 

H01P13D Datasheet and Replacement


   Type Designator: H01P13D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: DPAK
 

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H01P13D Datasheet (PDF)

 ..1. Size:257K  cn haohai electr
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H01P13D

H01P13DP-Channel MOSFET-13A, -100V, P H - 80Pcs 4Kpcs H01P13D DPAK 2500Pcs 1 HAOHAIH01P13K TO-252H01P13D Series Pin AssignmentID=-13A DESCRIPTIONVDS=-100V The H01P13D H01P13K RDS(on)=170m uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wid

Datasheet: RUH85210R , RUH85230S , RUH85350T , RUQ4040M2 , H0110D , H0110K , H01H14B , H01H14D , IRF1407 , H01P13K , H10N60P , H10N65P , H12N60P , H12N65P , H15N10U , H15N10D , H1N60U .

History: FXN13N50C

Keywords - H01P13D MOSFET datasheet

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