H01P13K PDF and Equivalents Search

 

H01P13K Specs and Replacement

Type Designator: H01P13K

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 40 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 13 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: TO-252

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H01P13K datasheet

 ..1. Size:257K  cn haohai electr
 h01p13d h01p13k.pdf pdf_icon

H01P13K

H01P13D P-Channel MOSFET -13A, -100V, P H - 80Pcs 4Kpcs H01P13D DPAK 2500Pcs 1 HAOHAI H01P13K TO-252 H01P13D Series Pin Assignment ID=-13A DESCRIPTION VDS=-100V The H01P13D H01P13K RDS(on)=170m uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wid... See More ⇒

Detailed specifications: RUH85230S, RUH85350T, RUQ4040M2, H0110D, H0110K, H01H14B, H01H14D, H01P13D, TK10A60D, H10N60P, H10N65P, H12N60P, H12N65P, H15N10U, H15N10D, H1N60U, H1N60D

Keywords - H01P13K MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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