All MOSFET. H01P13K Datasheet

 

H01P13K Datasheet and Replacement


   Type Designator: H01P13K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 13 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 65 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO-252
 

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H01P13K Datasheet (PDF)

 ..1. Size:257K  cn haohai electr
 h01p13d h01p13k.pdf pdf_icon

H01P13K

H01P13DP-Channel MOSFET-13A, -100V, P H - 80Pcs 4Kpcs H01P13D DPAK 2500Pcs 1 HAOHAIH01P13K TO-252H01P13D Series Pin AssignmentID=-13A DESCRIPTIONVDS=-100V The H01P13D H01P13K RDS(on)=170m uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wid

Datasheet: RUH85230S , RUH85350T , RUQ4040M2 , H0110D , H0110K , H01H14B , H01H14D , H01P13D , IRFZ24N , H10N60P , H10N65P , H12N60P , H12N65P , H15N10U , H15N10D , H1N60U , H1N60D .

History: IRFB7446G | ISL9N302AP3 | IRC533A | IRF840LC

Keywords - H01P13K MOSFET datasheet

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