H01P13K MOSFET. Datasheet pdf. Equivalent
Type Designator: H01P13K
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 13 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 25 nC
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 65 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO-252
H01P13K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H01P13K Datasheet (PDF)
h01p13d h01p13k.pdf
H01P13DP-Channel MOSFET-13A, -100V, P H - 80Pcs 4Kpcs H01P13D DPAK 2500Pcs 1 HAOHAIH01P13K TO-252H01P13D Series Pin AssignmentID=-13A DESCRIPTIONVDS=-100V The H01P13D H01P13K RDS(on)=170m uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wid
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