All MOSFET. H1N60D Datasheet

 

H1N60D Datasheet and Replacement


   Type Designator: H1N60D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm
   Package: TO-252
 

 H1N60D substitution

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H1N60D Datasheet (PDF)

 ..1. Size:386K  cn haohai electr
 h1n60u h1n60d.pdf pdf_icon

H1N60D

1N60 SeriesN-Channel MOSFET1A, 600V, N H FQU1N60C H1N60U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI1N60FQD1N60C H1N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/1N60 Series Pin AssignmentAPPLICATIONID=1A

Datasheet: H01P13K , H10N60P , H10N65P , H12N60P , H12N65P , H15N10U , H15N10D , H1N60U , 10N65 , H2301 , H2302 , H2302A , H2N60P , H2N60F , H2N60U , H2N60D , H2N65U .

History: IRFZ44RPBF | BL20N50-P

Keywords - H1N60D MOSFET datasheet

 H1N60D cross reference
 H1N60D equivalent finder
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