H1N60D PDF and Equivalents Search

 

H1N60D Specs and Replacement

Type Designator: H1N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 15 Ohm

Package: TO-252

H1N60D substitution

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H1N60D datasheet

 ..1. Size:386K  cn haohai electr
 h1n60u h1n60d.pdf pdf_icon

H1N60D

1N60 Series N-Channel MOSFET 1A, 600V, N H FQU1N60C H1N60U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 1N60 FQD1N60C H1N60D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 1N60 Series Pin Assignment APPLICATION ID=1A... See More ⇒

Detailed specifications: H01P13K, H10N60P, H10N65P, H12N60P, H12N65P, H15N10U, H15N10D, H1N60U, 5N60, H2301, H2302, H2302A, H2N60P, H2N60F, H2N60U, H2N60D, H2N65U

Keywords - H1N60D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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