H2301 Specs and Replacement
Type Designator: H2301
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 25 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
Package: SOT-23
H2301 substitution
- MOSFET ⓘ Cross-Reference Search
H2301 datasheet
h2301.pdf
HAOHAI ELECTRONICS H2301 - 2A, -20V, P-Channel MOSFET APPLICATIONS Load switch for portable Features DC/DC converter RDS(ON) 120m @ VGS=-4.5V FEATURE RDS(ON) 170m @ VGS=-2.5V High Density Cell Design For Ultra Industry-standard pinout SOT-23 Package Low On-Resistance Compatible with Existing Surface MountTechniques ... See More ⇒
h2301n.pdf
Spec. No. MOS200612 HI-SINCERITY Issued Date 2006.07.01 Revised Date 2006.07.11 MICROELECTRONICS CORP. Page No. 1/4 H2301N Pin Assignment & Symbol H2301N 3 3-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) Package Code N Pin 1 Gate 2 Source 3 Drain 2 1 Source Features Gate Drain RDS(on)... See More ⇒
Detailed specifications: H10N60P, H10N65P, H12N60P, H12N65P, H15N10U, H15N10D, H1N60U, H1N60D, RFP50N06, H2302, H2302A, H2N60P, H2N60F, H2N60U, H2N60D, H2N65U, H2N65D
Keywords - H2301 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: CMP40P03 | H2N60F
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