All MOSFET. H2301 Datasheet

 

H2301 Datasheet and Replacement


   Type Designator: H2301
   Marking Code: A1SHB
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 0.8 nC
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.17 Ohm
   Package: SOT-23
 

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H2301 Datasheet (PDF)

 ..1. Size:491K  cn haohai electr
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H2301

HAOHAI ELECTRONICS H2301 - 2A, -20V, P-Channel MOSFET APPLICATIONS Load switch for portable FeaturesDC/DC converterRDS(ON)120m @ VGS=-4.5V FEATURERDS(ON)170m @ VGS=-2.5VHigh Density Cell Design For UltraIndustry-standard pinout SOT-23 PackageLow On-ResistanceCompatible with Existing Surface MountTechniques

 0.1. Size:88K  hsmc
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H2301

Spec. No. : MOS200612 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.11 MICROELECTRONICS CORP. Page No. : 1/4 H2301N Pin Assignment & Symbol H2301N 33-Lead Plastic SOT-23 P-Channel Enhancement-Mode MOSFET (-20V, -2.2A) Package Code: N Pin 1: Gate 2: Source 3: Drain 21SourceFeatures GateDrain RDS(on)

Datasheet: H10N60P , H10N65P , H12N60P , H12N65P , H15N10U , H15N10D , H1N60U , H1N60D , SKD502T , H2302 , H2302A , H2N60P , H2N60F , H2N60U , H2N60D , H2N65U , H2N65D .

Keywords - H2301 MOSFET datasheet

 H2301 cross reference
 H2301 equivalent finder
 H2301 lookup
 H2301 substitution
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