H2302 Datasheet and Replacement
Type Designator: H2302
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: SOT-23
H2302 substitution
H2302 Datasheet (PDF)
h2302.pdf

HAOHAI ELECTRONICS H2302 2A 20V N-Channel MOSFET APPLICATIONS Load switch for portable FeaturesDC/DC converterRDS(ON)60m @ VGS=4.5V FEATURERDS(ON)100m @ VGS=2.5VHigh Density Cell Design For UltraIndustry-standard pinout SOT-23 PackageLow On-ResistanceCompatible with Existing Surface MountTechniques
h2302n.pdf

Spec. No. : MOS200613 HI-SINCERITY Issued Date : 2006.07.01 Revised Date : 2006.07.12 MICROELECTRONICS CORP. Page No. : 1/4 H2302N Pin Assignment & Symbol H2302N 33-Lead Plastic SOT-23 N-Channel Enhancement-Mode MOSFET (20V, 2.4A) Package Code: N Pin 1: Gate 2: Source 3: Drain 21DrainFeatures GateSource RDS(on)
h2302a.pdf

HAOHAI ELECTRONICS H2302A 4A, 20V, N-Channel MOSFETApplicationLoad Switch FeaturesPWM ApplicationRDS(ON)
Datasheet: H10N65P , H12N60P , H12N65P , H15N10U , H15N10D , H1N60U , H1N60D , H2301 , IRFZ46N , H2302A , H2N60P , H2N60F , H2N60U , H2N60D , H2N65U , H2N65D , H4N60P .
Keywords - H2302 MOSFET datasheet
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