H2N60U MOSFET Datasheet: N-Ch, 600V, 1.8A. Full specification with pinout and replacement list

H2N60U Specs and Replacement

Type Designator: H2N60U

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 1.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 38 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm

Package: TO-251

H2N60U substitution

- MOSFET ⓘ Cross-Reference Search

H2N60U datasheet

..1. Size:410K cn haohai electr
h2n60u h2n60d.pdf pdf_icon

... See More ⇒

9.1. Size:1336K lonten
lnd2n60 lnc2n60 lng2n60 lnh2n60.pdf pdf_icon

LND2N60/LNC2N60/LNG2N60/LNH2N60 Lonten N-channel 600V, 2A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planer VDMOS technology. The I 2A D resulting device has low conduction resistance, R 4.5 DS(on),max superior switching performance and high avalance Q 10.2 nC g,typ energy. Features Low R DS(on) Low gate charge ... See More ⇒

9.2. Size:374K cn haohai electr
h2n60p h2n60f.pdf pdf_icon

2N60 Series N-Channel MOSFET 2A, 600V, N H FQP2N60C H2N60P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 2N60 FQPF2N60C H2N60F F TO-220FP 2N60 Series Pin Assignment APPLICATION ID=2A ELECTRONIC BALLAST... See More ⇒

Detailed specifications: H15N10D, H1N60U, H1N60D, H2301, H2302, H2302A, H2N60P, H2N60F, IRF520, H2N60D, H2N65U, H2N65D, H4N60P, H4N60F, H4N60U, H4N60D, H4N65U