All MOSFET. H2N60U Datasheet

 

H2N60U Datasheet and Replacement


   Type Designator: H2N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-251
 

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H2N60U Datasheet (PDF)

 ..1. Size:410K  cn haohai electr
 h2n60u h2n60d.pdf pdf_icon

H2N60U

2N60 SeriesN-Channel MOSFET2A, 600V, N H FQU2N60C H2N60U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI2N60FQD2N60C H2N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/2N60 Series Pin AssignmentFeaturesID=1.8A

 9.1. Size:1336K  lonten
 lnd2n60 lnc2n60 lng2n60 lnh2n60.pdf pdf_icon

H2N60U

LND2N60/LNC2N60/LNG2N60/LNH2N60Lonten N-channel 600V, 2A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 2ADresulting device has low conduction resistance, R 4.5DS(on),maxsuperior switching performance and high avalance Q 10.2 nCg,typenergy.Features Low RDS(on) Low gate charge

 9.2. Size:374K  cn haohai electr
 h2n60p h2n60f.pdf pdf_icon

H2N60U

2N60 SeriesN-Channel MOSFET2A, 600V, N H FQP2N60C H2N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs2N60FQPF2N60C H2N60F F: TO-220FP2N60 Series Pin AssignmentAPPLICATIONID=2AELECTRONIC BALLAST

Datasheet: H15N10D , H1N60U , H1N60D , H2301 , H2302 , H2302A , H2N60P , H2N60F , IRF520 , H2N60D , H2N65U , H2N65D , H4N60P , H4N60F , H4N60U , H4N60D , H4N65U .

History: HFP740 | BUZ94 | SDD03N50 | H4N60F | 2SK3819

Keywords - H2N60U MOSFET datasheet

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