All MOSFET. H2N60U Datasheet

 

H2N60U Datasheet and Replacement


   Type Designator: H2N60U
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 1.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5.5 nC
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO-251
 

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H2N60U Datasheet (PDF)

 ..1. Size:410K  cn haohai electr
 h2n60u h2n60d.pdf pdf_icon

H2N60U

2N60 SeriesN-Channel MOSFET2A, 600V, N H FQU2N60C H2N60U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI2N60FQD2N60C H2N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/2N60 Series Pin AssignmentFeaturesID=1.8A

 9.1. Size:1336K  lonten
 lnd2n60 lnc2n60 lng2n60 lnh2n60.pdf pdf_icon

H2N60U

LND2N60/LNC2N60/LNG2N60/LNH2N60Lonten N-channel 600V, 2A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planer VDMOS technology. The I 2ADresulting device has low conduction resistance, R 4.5DS(on),maxsuperior switching performance and high avalance Q 10.2 nCg,typenergy.Features Low RDS(on) Low gate charge

 9.2. Size:374K  cn haohai electr
 h2n60p h2n60f.pdf pdf_icon

H2N60U

2N60 SeriesN-Channel MOSFET2A, 600V, N H FQP2N60C H2N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs2N60FQPF2N60C H2N60F F: TO-220FP2N60 Series Pin AssignmentAPPLICATIONID=2AELECTRONIC BALLAST

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF540Z

Keywords - H2N60U MOSFET datasheet

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