H4N60D MOSFET. Datasheet pdf. Equivalent
Type Designator: H4N60D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 14.8 nC
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO-252
H4N60D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H4N60D Datasheet (PDF)
h4n60u h4n60d.pdf
4N60 SeriesN-Channel MOSFET4A, 600V, N H FQU4N60C H4N60U U: TO-251 80/ 4Kpcs/ 24KpcsHAOHAI4N60FQD4N60C H4N60D D: TO-252 25Kpcs 2.5K/ 5Kpcs/4N60 Series Pin AssignmentAPPLICATIONID=4A
lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf
LNC4N60\LND4N60\LNG4N60\LNH4N60\LNF4N60Lonten N-channel 600V, 4A Power MOSFETDescription Product SummaryThe Power MOSFET is fabricated using the V 600VDSSadvanced planar VDMOS technology. The I 4ADresulting device has low conduction resistance, R 2.4DS(on),maxsuperior switching performance and high avalance Q 12.8 nCg,typenergy.Features Low RDS(on) Low gate
lnc4n60 lnd4n60 lng4n60 lnh4n60.pdf
LNC4N60\LND4N60\LNG4N60\LNH4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the VDSS 600V advanced planar VDMOS technology. The ID 4A resulting device has low conduction resistance, RDS(on),max 2.4 superior switching performance and high avalance Qg,typ 12.8 nC energy. Features Low RDS(on) Low gate charge
h4n60p h4n60f.pdf
4N60 SeriesN-Channel MOSFET4A, 600V, N H FQP4N60C H4N60P P: TO-220ABHAOHAI 50Pcs 1000Pcs 5000Pcs4N60FQPF4N60C H4N60F F: TO-220FP4N60 Series Pin AssignmentID=4AAPPLICATIONELECTRONIC BALLAST
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: CJ3400A
History: CJ3400A
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