H4N60D PDF and Equivalents Search

 

H4N60D Specs and Replacement

Type Designator: H4N60D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm

Package: TO-252

H4N60D substitution

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H4N60D datasheet

 ..1. Size:370K  cn haohai electr
 h4n60u h4n60d.pdf pdf_icon

H4N60D

4N60 Series N-Channel MOSFET 4A, 600V, N H FQU4N60C H4N60U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 4N60 FQD4N60C H4N60D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 4N60 Series Pin Assignment APPLICATION ID=4A... See More ⇒

 9.1. Size:178K  1
 ssp4n55 ssp4n60 ssh4n55 ssh4n60.pdf pdf_icon

H4N60D

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 9.2. Size:441K  semelab
 ssh4n55 ssh4n60.pdf pdf_icon

H4N60D

SSH4N55 PCB 24 ... See More ⇒

 9.3. Size:1293K  lonten
 lnc4n60 lnd4n60 lng4n60 lnh4n60 lnf4n60.pdf pdf_icon

H4N60D

LNC4N60 LND4N60 LNG4N60 LNH4N60 LNF4N60 Lonten N-channel 600V, 4A Power MOSFET Description Product Summary The Power MOSFET is fabricated using the V 600V DSS advanced planar VDMOS technology. The I 4A D resulting device has low conduction resistance, R 2.4 DS(on),max superior switching performance and high avalance Q 12.8 nC g,typ energy. Features Low R DS(on) Low gate... See More ⇒

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Detailed specifications: H2N60F, H2N60U, H2N60D, H2N65U, H2N65D, H4N60P, H4N60F, H4N60U, 75N75, H4N65U, H4N65D, H5N50U, H5N50D, H5N60P, H5N60F, H5N60U, H5N60D

Keywords - H4N60D MOSFET specs

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 H4N60D substitution

 H4N60D replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 

 

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