H6N70P MOSFET Datasheet: N-Ch, 700V, 6A. Full specification with pinout and replacement list

H6N70P Specs and Replacement

Type Designator: H6N70P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 40 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: TO-220AB

H6N70P substitution

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H6N70P datasheet

..1. Size:409K cn haohai electr
h6n70p h6n70f.pdf pdf_icon

6N70 Series N-Channel MOSFET 6A, 700V, N H FQP6N70C H6N70P P TO-220AB HAOHAI 50Pcs 1000Pcs 5000Pcs 6N70 FQPF6N70C H6N70F F TO-220FP 6N70 Series Pin Assignment Features ID=6A Originative New Design BVD... See More ⇒

9.1. Size:935K samsung
ssh6n70a.pdf pdf_icon

Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS(on) = 1.8 Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 25 A (Max.) @ VDS = 700V Low RDS(ON) 1.552 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Value ... See More ⇒

9.2. Size:375K cn haohai electr
h6n70u h6n70d.pdf pdf_icon

6N70 Series N-Channel MOSFET 6A, 700V, N H FQU6N70C H6N70U U TO-251 80 / 4Kpcs/ 24Kpcs HAOHAI 6N70 FQD6N70C H6N70D D TO-252 25Kpcs 2.5K/ 5Kpcs/ 6N70 Series Pin Assignment APPLICATION ID=6A... See More ⇒

Detailed specifications: H4N65U, H4N65D, H5N50U, H5N50D, H5N60P, H5N60F, H5N60U, H5N60D, IRLB3034, H6N70F, H6N70U, H6N70D, H7N60P, H7N60F, H8N60P, H8N60F, H8N65P