H8N60P PDF and Equivalents Search

 

H8N60P Specs and Replacement

Type Designator: H8N60P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-220AB

H8N60P substitution

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H8N60P datasheet

 ..1. Size:405K  cn haohai electr
 h8n60p h8n60f.pdf pdf_icon

H8N60P

8N60 Series N-Channel MOSFET 7.5A, 600V, N H FQP8N60C H8N60P P TO-220AB 8N60 HAOHAI 50Pcs 1000Pcs 5000Pcs FQPF8N60C H8N60F F TO-220FP 8N60 Series Pin Assignment Features ID=7.5A Originative New Design ... See More ⇒

 9.1. Size:390K  motorola
 mth8n55 mth8n60 mtm8n60.pdf pdf_icon

H8N60P

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Detailed specifications: H5N60U, H5N60D, H6N70P, H6N70F, H6N70U, H6N70D, H7N60P, H7N60F, RU7088R, H8N60F, H8N65P, H8N65F, H90N71P, H90N71F, HIRFZ24NP, HIRFZ24NF, HIRFZ44N

Keywords - H8N60P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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