HNM2302ALB MOSFET Datasheet: N-Ch, 20V, 3.7A. Full specification with pinout and replacement list

HNM2302ALB Specs and Replacement

Type Designator: HNM2302ALB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 3.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: SOT-23

HNM2302ALB substitution

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HNM2302ALB datasheet

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HNM2302ALB N-Channel MOSFETs 3.7A, 20V N N HNM2302ALB N-Channel Enhancement Mode Field Effect Transistor SMD N-Channel Enhancement Mode Features Field Effect Transistor 20V, 3.7A, RDS(ON)=50m @ VGS=4.5V High dense cell design for extremely low RDS(ON) ... See More ⇒

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HNM2302 N-Channel MOSFETs 3.5A, 20V N N MOS HNM2302 N-Channel Enhancement Mode Field Effect Transistor N-Channel Enhancement Mode Features Field Effect Transistor 20V, 3.5A, RDS(ON)=60m @VGS=4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable ... See More ⇒

Detailed specifications: H90N71F, HIRFZ24NP, HIRFZ24NF, HIRFZ44N, HIRFZ44F, HLML6401, HMDN3010D, HNM2302, IRF540N, HNM7002, HNM7002E, HPB068NE7STA, HPD025N03STA, HPD026N02STA, HPD032N02STA, HPD045N03CTA, HPP045N03CTA