All MOSFET. HNM2302ALB Datasheet

 

HNM2302ALB Datasheet and Replacement


   Type Designator: HNM2302ALB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 3.7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SOT-23
 

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HNM2302ALB Datasheet (PDF)

 ..1. Size:281K  cn haohai electr
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HNM2302ALB

HNM2302ALBN-Channel MOSFETs3.7A, 20V N N HNM2302ALBN-Channel Enhancement Mode Field Effect Transistor SMDN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.7A, RDS(ON)=50m @ VGS=4.5VHigh dense cell design for extremely low RDS(ON)

 7.1. Size:280K  cn haohai electr
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HNM2302ALB

HNM2302N-Channel MOSFETs3.5A, 20V N N MOS HNM2302N-Channel Enhancement Mode Field Effect TransistorN-ChannelEnhancement ModeFeaturesField Effect Transistor20V, 3.5A, RDS(ON)=60m @VGS=4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable

Datasheet: H90N71F , HIRFZ24NP , HIRFZ24NF , HIRFZ44N , HIRFZ44F , HLML6401 , HMDN3010D , HNM2302 , IRF540 , HNM7002 , HNM7002E , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA .

History: IPP70N12S3-11 | G2002L

Keywords - HNM2302ALB MOSFET datasheet

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