HNM7002 PDF and Equivalents Search

 

HNM7002 Specs and Replacement

Type Designator: HNM7002

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.115 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 25 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm

Package: SOT-23

HNM7002 substitution

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HNM7002 datasheet

 ..1. Size:285K  cn haohai electr
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HNM7002

HNM7002 N-Channel MOSFETs 115mA,60V N N N-Channel Enhancement Mode Field Effect Transistor SMD HNM7002 N-Channel Features Enhancement Mode 60V, 115mA, RDS(ON)=7.5 @ VGS=5V Field Effect Transistor High dense cell design for extremely low RDS(ON) Rugged... See More ⇒

 0.1. Size:283K  cn haohai electr
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HNM7002

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Detailed specifications: HIRFZ24NP, HIRFZ24NF, HIRFZ44N, HIRFZ44F, HLML6401, HMDN3010D, HNM2302, HNM2302ALB, IRF540, HNM7002E, HPB068NE7STA, HPD025N03STA, HPD026N02STA, HPD032N02STA, HPD045N03CTA, HPP045N03CTA, HPD160N06STA

Keywords - HNM7002 MOSFET specs

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