All MOSFET. HNM7002 Datasheet

 

HNM7002 Datasheet and Replacement


   Type Designator: HNM7002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 0.115 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 25 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
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HNM7002 Datasheet (PDF)

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HNM7002

HNM7002N-Channel MOSFETs115mA,60VNN N-Channel Enhancement Mode Field Effect Transistor SMDHNM7002N-ChannelFeaturesEnhancement Mode60V, 115mA, RDS(ON)=7.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)Rugged

 0.1. Size:283K  cn haohai electr
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HNM7002

HNM7002EN-Channel MOSFETs300mA,60VNN N-Channel Enhancement-Mode MOSFET With ESD SMDHNM7002EN-ChannelFeaturesEnhancement Mode60V, 300mA, RDS(ON)=3.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)

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History: BUZ94 | SSW65R190S2 | SM4186T9RL | SRT10N160LD | APT10021JFLL | NCE30P12BS | NP180N04TUJ

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