All MOSFET. HNM7002 Datasheet

 

HNM7002 Datasheet and Replacement


   Type Designator: HNM7002
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.115 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 25 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 7.5 Ohm
   Package: SOT-23
 

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HNM7002 Datasheet (PDF)

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HNM7002

HNM7002N-Channel MOSFETs115mA,60VNN N-Channel Enhancement Mode Field Effect Transistor SMDHNM7002N-ChannelFeaturesEnhancement Mode60V, 115mA, RDS(ON)=7.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)Rugged

 0.1. Size:283K  cn haohai electr
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HNM7002

HNM7002EN-Channel MOSFETs300mA,60VNN N-Channel Enhancement-Mode MOSFET With ESD SMDHNM7002EN-ChannelFeaturesEnhancement Mode60V, 300mA, RDS(ON)=3.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)

Datasheet: HIRFZ24NP , HIRFZ24NF , HIRFZ44N , HIRFZ44F , HLML6401 , HMDN3010D , HNM2302 , HNM2302ALB , IRF540N , HNM7002E , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , HPD160N06STA .

History: FCMT125N65S3 | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36

Keywords - HNM7002 MOSFET datasheet

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