All MOSFET. HNM7002E Datasheet

 

HNM7002E Datasheet and Replacement


   Type Designator: HNM7002E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
   Package: SOT-23
 

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HNM7002E Datasheet (PDF)

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HNM7002E

HNM7002EN-Channel MOSFETs300mA,60VNN N-Channel Enhancement-Mode MOSFET With ESD SMDHNM7002EN-ChannelFeaturesEnhancement Mode60V, 300mA, RDS(ON)=3.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)

 7.1. Size:285K  cn haohai electr
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HNM7002E

HNM7002N-Channel MOSFETs115mA,60VNN N-Channel Enhancement Mode Field Effect Transistor SMDHNM7002N-ChannelFeaturesEnhancement Mode60V, 115mA, RDS(ON)=7.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)Rugged

Datasheet: HIRFZ24NF , HIRFZ44N , HIRFZ44F , HLML6401 , HMDN3010D , HNM2302 , HNM2302ALB , HNM7002 , 50N06 , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA .

History: 2SK2009 | WMQ090N04LG2 | CS4482DY | IRF7702G | TK10A60D5 | RUH40190M | NTMFS6H800N

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