HNM7002E Datasheet and Replacement
Type Designator: HNM7002E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT-23
HNM7002E substitution
HNM7002E Datasheet (PDF)
hnm7002e.pdf
HNM7002EN-Channel MOSFETs300mA,60VNN N-Channel Enhancement-Mode MOSFET With ESD SMDHNM7002EN-ChannelFeaturesEnhancement Mode60V, 300mA, RDS(ON)=3.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)
hnm7002.pdf
HNM7002N-Channel MOSFETs115mA,60VNN N-Channel Enhancement Mode Field Effect Transistor SMDHNM7002N-ChannelFeaturesEnhancement Mode60V, 115mA, RDS(ON)=7.5 @ VGS=5VField Effect TransistorHigh dense cell design for extremely low RDS(ON)Rugged
Datasheet: HIRFZ24NF , HIRFZ44N , HIRFZ44F , HLML6401 , HMDN3010D , HNM2302 , HNM2302ALB , HNM7002 , 50N06 , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA .
History: LSGN04R025 | JMSL0402AK | 2SK844 | DG4N60 | R6009KNJ | BSS127 | MIC94052BC6TR
Keywords - HNM7002E MOSFET datasheet
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HNM7002E replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: LSGN04R025 | JMSL0402AK | 2SK844 | DG4N60 | R6009KNJ | BSS127 | MIC94052BC6TR
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