HNM7002E Specs and Replacement
Type Designator: HNM7002E
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.225 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3.5 Ohm
Package: SOT-23
HNM7002E substitution
- MOSFET ⓘ Cross-Reference Search
HNM7002E datasheet
hnm7002.pdf
HNM7002 N-Channel MOSFETs 115mA,60V N N N-Channel Enhancement Mode Field Effect Transistor SMD HNM7002 N-Channel Features Enhancement Mode 60V, 115mA, RDS(ON)=7.5 @ VGS=5V Field Effect Transistor High dense cell design for extremely low RDS(ON) Rugged... See More ⇒
Detailed specifications: HIRFZ24NF, HIRFZ44N, HIRFZ44F, HLML6401, HMDN3010D, HNM2302, HNM2302ALB, HNM7002, 50N06, HPB068NE7STA, HPD025N03STA, HPD026N02STA, HPD032N02STA, HPD045N03CTA, HPP045N03CTA, HPD160N06STA, HPD180PNE1DTA
Keywords - HNM7002E MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: BSP230
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