HPB068NE7STA PDF and Equivalents Search

 

HPB068NE7STA Specs and Replacement

Type Designator: HPB068NE7STA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 214 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm

Package: TO-263

HPB068NE7STA substitution

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HPB068NE7STA datasheet

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HPB068NE7STA

HAOHAI ELECTRONICS HPB068NE7STA Product Summary 120A, 80V VDS 80 V N-CHANNEL POWER MOSFET RDS(ON) Max. 6.8 m Features Advanced process technology Ultra low On-Resistance ID 120 A 175 OperatingTemperature Fast Switching 2.Drain RepetitiveAvalancheAllowed up toTjmax Lead-Free D 1.Gate D G TO-263 D2PAK S 3.Source ORDERING INFORMATION Pin Assignm... See More ⇒

Detailed specifications: HIRFZ44N, HIRFZ44F, HLML6401, HMDN3010D, HNM2302, HNM2302ALB, HNM7002, HNM7002E, IRFP460, HPD025N03STA, HPD026N02STA, HPD032N02STA, HPD045N03CTA, HPP045N03CTA, HPD160N06STA, HPD180PNE1DTA, HPD4004STA

Keywords - HPB068NE7STA MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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