All MOSFET. HPB068NE7STA Datasheet

 

HPB068NE7STA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPB068NE7STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 214 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 139 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0068 Ohm
   Package: TO-263

 HPB068NE7STA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPB068NE7STA Datasheet (PDF)

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 hpb068ne7sta.pdf

HPB068NE7STA HPB068NE7STA

HAOHAI ELECTRONICS HPB068NE7STAProduct Summary120A, 80V VDS80 VN-CHANNEL POWER MOSFETRDS(ON) Max.6.8 mFeaturesAdvanced process technologyUltra low On-ResistanceID120 A175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-FreeD1.GateDGTO-263D2PAKS3.SourceORDERING INFORMATIONPin Assignm

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