All MOSFET. HPD025N03STA Datasheet

 

HPD025N03STA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPD025N03STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 180 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 500 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252

 HPD025N03STA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPD025N03STA Datasheet (PDF)

 ..1. Size:1193K  cn haohai electr
 hpd025n03sta.pdf

HPD025N03STA HPD025N03STA

HPD025N03STAProduct Summary30V, 180AN-CHANNEL POWER MOSFETVDS30 VFeaturesR Max.2.5 m DS(ON)RDS(ON)

 9.1. Size:471K  cn haohai electr
 hpd026n02sta.pdf

HPD025N03STA HPD025N03STA

HAOHAI ELECTRONICS HPD026N02STAProduct Summary110A, 20VVDSV20N-CHANNEL POWER MOSFETRDS(ON) Max.2.6 mFeaturesAdvanced process technologyUltra low On-ResistanceID110 A175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-FreeD1.GateDGSDPAKTO-2523.SourceORDERING INFORMATIONPin AssignmentPackingOrder

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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