HPD025N03STA MOSFET Datasheet: N-Ch, 30V, 180A. Full specification with pinout and replacement list

HPD025N03STA Specs and Replacement

Type Designator: HPD025N03STA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 108 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 500 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-252

HPD025N03STA substitution

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HPD025N03STA datasheet

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HPD025N03STA Product Summary 30V, 180A N-CHANNEL POWER MOSFET VDS 30 V Features R Max. 2.5 m DS(ON) RDS(ON)... See More ⇒

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HAOHAI ELECTRONICS HPD026N02STA Product Summary 110A, 20V VDS V 20 N-CHANNEL POWER MOSFET RDS(ON) Max. 2.6 m Features Advanced process technology Ultra low On-Resistance ID 110 A 175 OperatingTemperature Fast Switching 2.Drain RepetitiveAvalancheAllowed up toTjmax Lead-Free D 1.Gate D G S DPAK TO-252 3.Source ORDERING INFORMATION Pin Assignment Packing Order... See More ⇒

Detailed specifications: HIRFZ44F, HLML6401, HMDN3010D, HNM2302, HNM2302ALB, HNM7002, HNM7002E, HPB068NE7STA, IRFZ44, HPD026N02STA, HPD032N02STA, HPD045N03CTA, HPP045N03CTA, HPD160N06STA, HPD180PNE1DTA, HPD4004STA, HPD4006CTA