HPD026N02STA Datasheet and Replacement
Type Designator: HPD026N02STA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 71 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 32 nS
Cossⓘ - Output Capacitance: 327 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
Package: TO-252
HPD026N02STA substitution
HPD026N02STA Datasheet (PDF)
hpd026n02sta.pdf
HAOHAI ELECTRONICS HPD026N02STAProduct Summary110A, 20VVDSV20N-CHANNEL POWER MOSFETRDS(ON) Max.2.6 mFeaturesAdvanced process technologyUltra low On-ResistanceID110 A175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-FreeD1.GateDGSDPAKTO-2523.SourceORDERING INFORMATIONPin AssignmentPackingOrder
hpd025n03sta.pdf
HPD025N03STAProduct Summary30V, 180AN-CHANNEL POWER MOSFETVDS30 VFeaturesR Max.2.5 m DS(ON)RDS(ON)
Datasheet: HLML6401 , HMDN3010D , HNM2302 , HNM2302ALB , HNM7002 , HNM7002E , HPB068NE7STA , HPD025N03STA , IRFZ44 , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA .
History: SWD7N65K2 | FDS8958AF085 | 45N06 | BUK452-60B | FDS89141 | 2SK3818 | 2SK3819
Keywords - HPD026N02STA MOSFET datasheet
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History: SWD7N65K2 | FDS8958AF085 | 45N06 | BUK452-60B | FDS89141 | 2SK3818 | 2SK3819
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