HPD026N02STA PDF and Equivalents Search

 

HPD026N02STA Specs and Replacement

Type Designator: HPD026N02STA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 71 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 110 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 32 nS

Cossⓘ - Output Capacitance: 327 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-252

HPD026N02STA substitution

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HPD026N02STA datasheet

 ..1. Size:471K  cn haohai electr
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HPD026N02STA

HAOHAI ELECTRONICS HPD026N02STA Product Summary 110A, 20V VDS V 20 N-CHANNEL POWER MOSFET RDS(ON) Max. 2.6 m Features Advanced process technology Ultra low On-Resistance ID 110 A 175 OperatingTemperature Fast Switching 2.Drain RepetitiveAvalancheAllowed up toTjmax Lead-Free D 1.Gate D G S DPAK TO-252 3.Source ORDERING INFORMATION Pin Assignment Packing Order... See More ⇒

 9.1. Size:1193K  cn haohai electr
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HPD026N02STA

HPD025N03STA Product Summary 30V, 180A N-CHANNEL POWER MOSFET VDS 30 V Features R Max. 2.5 m DS(ON) RDS(ON)... See More ⇒

Detailed specifications: HLML6401, HMDN3010D, HNM2302, HNM2302ALB, HNM7002, HNM7002E, HPB068NE7STA, HPD025N03STA, IRF640, HPD032N02STA, HPD045N03CTA, HPP045N03CTA, HPD160N06STA, HPD180PNE1DTA, HPD4004STA, HPD4006CTA, HPB400N06CTA

Keywords - HPD026N02STA MOSFET specs

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