All MOSFET. HPD026N02STA Datasheet

 

HPD026N02STA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPD026N02STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 71 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 110 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252

 HPD026N02STA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPD026N02STA Datasheet (PDF)

 ..1. Size:471K  cn haohai electr
 hpd026n02sta.pdf

HPD026N02STA HPD026N02STA

HAOHAI ELECTRONICS HPD026N02STAProduct Summary110A, 20VVDSV20N-CHANNEL POWER MOSFETRDS(ON) Max.2.6 mFeaturesAdvanced process technologyUltra low On-ResistanceID110 A175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-FreeD1.GateDGSDPAKTO-2523.SourceORDERING INFORMATIONPin AssignmentPackingOrder

 9.1. Size:1193K  cn haohai electr
 hpd025n03sta.pdf

HPD026N02STA HPD026N02STA

HPD025N03STAProduct Summary30V, 180AN-CHANNEL POWER MOSFETVDS30 VFeaturesR Max.2.5 m DS(ON)RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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