All MOSFET. HPD4004STA Datasheet

 

HPD4004STA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPD4004STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 108 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 411 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-252

 HPD4004STA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPD4004STA Datasheet (PDF)

 ..1. Size:770K  cn haohai electr
 hpd4004sta.pdf

HPD4004STA HPD4004STA

HPD4004STA40V, 120AProduct SummaryN-channel Enhancement Mode Power MOSFETVDSRDS(ON)

 8.1. Size:168K  cn haohai electr
 hpd4006cta hpb400n06cta hpp400n06cta.pdf

HPD4004STA HPD4004STA

HPD4006CTATO-252HPB400N06CTATO-263HAOHAI ELECTRONICSHPP400N06CTATO-220Product Summary27A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.40 mFeaturesAdvanced process technologyID27 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free221.Gate1 1123 33TO-2

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