All MOSFET. HPB400N06CTA Datasheet

 

HPB400N06CTA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPB400N06CTA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 27 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 13 nC
   trⓘ - Rise Time: 3.4 nS
   Cossⓘ - Output Capacitance: 66 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO-220

 HPB400N06CTA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPB400N06CTA Datasheet (PDF)

 ..1. Size:168K  cn haohai electr
 hpd4006cta hpb400n06cta hpp400n06cta.pdf

HPB400N06CTA HPB400N06CTA

HPD4006CTATO-252HPB400N06CTATO-263HAOHAI ELECTRONICSHPP400N06CTATO-220Product Summary27A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.40 mFeaturesAdvanced process technologyID27 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free221.Gate1 1123 33TO-2

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