HPM2305 MOSFET. Datasheet pdf. Equivalent
Type Designator: HPM2305
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id|ⓘ - Maximum Drain Current: 3.9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: SOT-23
HPM2305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HPM2305 Datasheet (PDF)
hpm2305.pdf
HPM2305P-Channel MOSFETs-3.9A,-20VP P HPM2305P-Channel Enhancement-Mode MOS FETs SMDP-ChannelEnhancementFeaturesMode MOS FETs-20V, -3.9A, RDS(ON)=55m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable
hpm2301.pdf
HPM2301P-Channel MOSFETs-2.8A,-20VP P HPM2301P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -2.8A, RDS(ON)=100m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: HPP400N06CTA | 2N4391 | 2N4392 | 2N6963 | FCPF11N60 | 2N6656 | 2N3824
History: HPP400N06CTA | 2N4391 | 2N4392 | 2N6963 | FCPF11N60 | 2N6656 | 2N3824
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