All MOSFET. HPM2305 Datasheet

 

HPM2305 Datasheet and Replacement


   Type Designator: HPM2305
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT-23
 
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HPM2305 Datasheet (PDF)

 ..1. Size:282K  cn haohai electr
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HPM2305

HPM2305P-Channel MOSFETs-3.9A,-20VP P HPM2305P-Channel Enhancement-Mode MOS FETs SMDP-ChannelEnhancementFeaturesMode MOS FETs-20V, -3.9A, RDS(ON)=55m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable

 8.1. Size:235K  cn haohai electr
 hpm2301.pdf pdf_icon

HPM2305

HPM2301P-Channel MOSFETs-2.8A,-20VP P HPM2301P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -2.8A, RDS(ON)=100m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea

Datasheet: HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , IRFP250N , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA .

History: SSF2306 | SSZ65R022SFD3 | 2SK118

Keywords - HPM2305 MOSFET datasheet

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