HPM2305 Datasheet. Specs and Replacement

Type Designator: HPM2305  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 3.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: SOT-23

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HPM2305 datasheet

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HPM2305

HPM2305 P-Channel MOSFETs -3.9A,-20V P P HPM2305 P-Channel Enhancement-Mode MOS FETs SMD P-Channel Enhancement Features Mode MOS FETs -20V, -3.9A, RDS(ON)=55m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable ... See More ⇒

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HPM2305

HPM2301 P-Channel MOSFETs -2.8A,-20V P P HPM2301 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -20V, -2.8A, RDS(ON)=100m @ VGS=-10V High dense cell design for extremely low RDS(ON) Rugged and reliable Lea... See More ⇒

Detailed specifications: HPP045N03CTA, HPD160N06STA, HPD180PNE1DTA, HPD4004STA, HPD4006CTA, HPB400N06CTA, HPP400N06CTA, HPM2301, IRFB4115, HPM2623, HPM3401, HPM3401A, HPM3415, HPMB84A, HPP080NE5SPA, HPP120N08STA, HPW080NE5SPA

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