HPM2305 MOSFET Datasheet: P-Ch, 20V, 3.9A. Full specification with pinout and replacement list

HPM2305 Specs and Replacement

   Type Designator: HPM2305
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: SOT-23

HPM2305 substitution

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HPM2305 datasheet

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HPM2305 P-Channel MOSFETs -3.9A,-20V P P HPM2305 P-Channel Enhancement-Mode MOS FETs SMD P-Channel Enhancement Features Mode MOS FETs -20V, -3.9A, RDS(ON)=55m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable ... See More ⇒

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HPM2301 P-Channel MOSFETs -2.8A,-20V P P HPM2301 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -20V, -2.8A, RDS(ON)=100m @ VGS=-10V High dense cell design for extremely low RDS(ON) Rugged and reliable Lea... See More ⇒

Detailed specifications: HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , IRFB4115 , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA .