HPM2623 Datasheet and Replacement
Type Designator: HPM2623
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOT-23
HPM2623 substitution
HPM2623 Datasheet (PDF)
hpm2623.pdf

HPM2623P-Channel MOSFETs-6A, -20V P P HPM2623P-Channel Enhancement-Mode MOSFETs SMDP-ChannelEnhancementFeaturesMode MOS FETs-20V, -6A, RDS(ON)=33m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON) Rugged a
Datasheet: HPD160N06STA , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , HPM2305 , IRFP250N , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA , HPW750N20SPA .
History: FDMD82100L
Keywords - HPM2623 MOSFET datasheet
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History: FDMD82100L



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