All MOSFET. HPM3401A Datasheet

 

HPM3401A Datasheet and Replacement


   Type Designator: HPM3401A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23
      - MOSFET Cross-Reference Search

 

HPM3401A Datasheet (PDF)

 ..1. Size:282K  cn haohai electr
 hpm3401a.pdf pdf_icon

HPM3401A

HPM3401AP-Channel MOSFETs-4.2A,-30VPP HPM3401AP-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -4.2A, RDS(ON)=53m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLe

 7.1. Size:283K  cn haohai electr
 hpm3401.pdf pdf_icon

HPM3401A

HPM3401P-Channel MOSFETs-3.8A,-30VP PHPM3401P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -3.8A, RDS(ON)=50m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLead f

 9.1. Size:282K  cn haohai electr
 hpm3415.pdf pdf_icon

HPM3401A

HPM3415P-Channel MOSFETs-4.0A,-30VP P HPM3415P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -4.0A, RDS(ON)=35m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: ZVN0540ASTOA | IRLR024 | AON6794 | MC08N005C | DMG1013T | CED05N8 | BL10N70-A

Keywords - HPM3401A MOSFET datasheet

 HPM3401A cross reference
 HPM3401A equivalent finder
 HPM3401A lookup
 HPM3401A substitution
 HPM3401A replacement

 

 
Back to Top

 


 
.