All MOSFET. HPM3401A Datasheet

 

HPM3401A MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPM3401A
   Marking Code: X1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 115 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT-23

 HPM3401A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPM3401A Datasheet (PDF)

 ..1. Size:282K  cn haohai electr
 hpm3401a.pdf

HPM3401A HPM3401A

HPM3401AP-Channel MOSFETs-4.2A,-30VPP HPM3401AP-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -4.2A, RDS(ON)=53m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLe

 7.1. Size:283K  cn haohai electr
 hpm3401.pdf

HPM3401A HPM3401A

HPM3401P-Channel MOSFETs-3.8A,-30VP PHPM3401P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-30V, -3.8A, RDS(ON)=50m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLead f

 9.1. Size:282K  cn haohai electr
 hpm3415.pdf

HPM3401A HPM3401A

HPM3415P-Channel MOSFETs-4.0A,-30VP P HPM3415P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -4.0A, RDS(ON)=35m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

 

 
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