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HPW080NE5SPA Specs and Replacement


   Type Designator: HPW080NE5SPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-247AC
 

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HPW080NE5SPA Specs

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HPW080NE5SPA

HAOHAI ELECTRONICS HPW080NE5SPA Product Summary 110A, 55V VDS 55 V N-CHANNEL POWER MOSFET RDS(ON) Max. 8.0 m Features Advanced process technology ID 110 A Ultra low On-Resistance 175 OperatingTemperature Fast Switching 2.Drain RepetitiveAvalancheAllowed up toTjmax Lead-Free 1.Gate 1 2 TO-247AC 3 3.Source ORDERING INFORMATION Pin Assignment Packing Order Number ... See More ⇒

Detailed specifications: HPM2305 , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , AON7408 , HPW750N20SPA , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G , NCE025N30K .

History: 2N6764JTX

Keywords - HPW080NE5SPA MOSFET specs

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