All MOSFET. HPW080NE5SPA Datasheet

 

HPW080NE5SPA Datasheet and Replacement


   Type Designator: HPW080NE5SPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-247AC
 

 HPW080NE5SPA substitution

   - MOSFET ⓘ Cross-Reference Search

 

HPW080NE5SPA Datasheet (PDF)

 ..1. Size:365K  cn haohai electr
 hpw080ne5spa.pdf pdf_icon

HPW080NE5SPA

HAOHAI ELECTRONICS HPW080NE5SPAProduct Summary110A, 55VVDS55 VN-CHANNEL POWER MOSFETRDS(ON) Max.8.0 mFeaturesAdvanced process technologyID110 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free1.Gate12TO-247AC33.SourceORDERING INFORMATIONPin AssignmentPackingOrder Number

Datasheet: HPM2305 , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , IRLZ44N , HPW750N20SPA , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G , NCE025N30K .

History: 2N6764JTX | STU609S

Keywords - HPW080NE5SPA MOSFET datasheet

 HPW080NE5SPA cross reference
 HPW080NE5SPA equivalent finder
 HPW080NE5SPA lookup
 HPW080NE5SPA substitution
 HPW080NE5SPA replacement

 

 
Back to Top

 


 
.