All MOSFET. HUFA75645S3S Datasheet

 

HUFA75645S3S MOSFET. Datasheet pdf. Equivalent

Type Designator: HUFA75645S3S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 238 nC

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO263 D2PAK

HUFA75645S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUFA75645S3S Datasheet (PDF)

0.1. hufa75645s3s.pdf Size:352K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75645S3SData Sheet December 2001N-Channel UltraFET Power MOSFET100 V, 75 A, 14 mPackaging Features Ultra Low On-ResistanceJEDEC TO-263AB- rDS(ON) = 0.014, VGS = 10VDRAIN Simulation Models (FLANGE)- Temperature Compensated PSPICE and SABERElectrical ModelsGATE- Spice and Saber Thermal Impedance ModelsSOURCE- www.fairchild.com Peak Current

5.1. hufa75645p3.pdf Size:152K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75645P3, HUFA75645S3SData Sheet December 200175A, 100V, 0.014 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCE DRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.014, VGS = 10VGATE Simulation ModelsSOURCE- Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN- Spice and Saber

 7.1. hufa75639g3 hufa75639p3 hufa75639s3st.pdf Size:221K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp

7.2. hufa75652g3.pdf Size:195K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75652G3Data Sheet December 200175A, 100V, 0.008 Ohm, N-Channel UltraFET Power MOSFETPackagingJEDEC TO-247FeaturesSOURCEDRAIN Ultra Low On-ResistanceGATE- rDS(ON) = 0.008, VGS = 10V Simulation Models- Temperature Compensated PSPICE and SABER Electrical Models- Spice and SABER Thermal Impedance Models- www.fairchildsemi.comDRAINHUFA75652G3

 7.3. hufa75623s3st.pdf Size:198K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75623P3, HUFA75623S3STData Sheet December 200122A, 100V, 0.064 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.064, VGS = 10VGATE Simulation Models- Temperature Compensated PSPICE and SABER SOURCEElectrical ModelsDRAIN- Spice and SABER

7.4. hufa75617d3s hufa75617d3st.pdf Size:196K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75617D3, HUFA75617D3SData Sheet December 200116A, 100V, 0.090 Ohm, N-Channel, UltraFET Power MOSFETsPackagingJEDEC TO-251AA JEDEC TO-252AAFeatures Ultra Low On-ResistanceSOURCEDRAINDRAIN- rDS(ON) = 0.090, VGS = 10VGATE (FLANGE) Simulation Models- Temperature Compensated PSPICE and SABER GATEElectrical ModelsDRAIN SOURCE- Spice and SABER

 7.5. hufa75637p3 hufa75637s3s hufa75637s3st.pdf Size:200K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75637P3, HUFA75637S3SData Sheet December 200144A, 100V, 0.030 Ohm, N-Channel, UltraFET Power MOSFETPackagingJEDEC TO-220AB JEDEC TO-263ABFeaturesSOURCEDRAINDRAIN Ultra Low On-Resistance (FLANGE)GATE- rDS(ON) = 0.030, VGS = 10VGATE Simulation ModelsSOURCE - Temperature Compensated PSPICE and SABER Electrical ModelsDRAIN (FLANGE) - Spice a

7.6. hufa75639g3 hufa75639p3 hufa75639s3s.pdf Size:221K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75639G3, HUFA75639P3, HUFA75639S3SData Sheet December 200156A, 100V, 0.025 Ohm, N-Channel FeaturesUltraFET Power MOSFETs 56A, 100VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Electrical Modelsadvanced process technology - Spice and Saber Thermal Imp

Datasheet: FDS4675 , FQD5P10 , FQD5P20 , FQD6N25 , FQD6N40C , HUFA76419D_F085 , FQD6N50C , FQD7N10L , IRF630A , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 , FQD9N25 .

 

 
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