All MOSFET. HUFA75645S3S Datasheet

 

HUFA75645S3S MOSFET. Datasheet pdf. Equivalent

Type Designator: HUFA75645S3S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 310 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 238 nC

Maximum Drain-Source On-State Resistance (Rds): 0.014 Ohm

Package: TO263, D2PAK

HUFA75645S3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HUFA75645S3S Datasheet (PDF)

0.1. hufa75645s3s.pdf Size:352K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75645S3S Data Sheet December 2001 N-Channel UltraFET Power MOSFET 100 V, 75 A, 14 mΩ Packaging Features • Ultra Low On-Resistance JEDEC TO-263AB - rDS(ON) = 0.014Ω, VGS = 10V DRAIN • Simulation Models (FLANGE) - Temperature Compensated PSPICE® and SABER™ Electrical Models GATE - Spice and Saber Thermal Impedance Models SOURCE - www.fairchild.com • Peak Current

5.1. hufa75645p3.pdf Size:152K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

 HUFA75645P3, HUFA75645S3S Data Sheet December 2001 75A, 100V, 0.014 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN • Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.014Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN - Spice and Saber

 7.1. hufa75639g3 hufa75639p3 hufa75639s3st.pdf Size:221K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber Thermal Imp

7.2. hufa75652g3.pdf Size:195K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75652G3 Data Sheet December 2001 75A, 100V, 0.008 Ohm, N-Channel UltraFET® Power MOSFET Packaging JEDEC TO-247 Features SOURCE DRAIN • Ultra Low On-Resistance GATE - rDS(ON) = 0.008Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE® and SABER™ Electrical Models - Spice and SABER Thermal Impedance Models - www.fairchildsemi.com DRAIN HUFA75652G3

 7.3. hufa75623s3st.pdf Size:198K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75623P3, HUFA75623S3ST Data Sheet December 2001 22A, 100V, 0.064 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN • Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.064Ω, VGS = 10V GATE • Simulation Models - Temperature Compensated PSPICE® and SABER™ SOURCE Electrical Models DRAIN - Spice and SABER

7.4. hufa75617d3s hufa75617d3st.pdf Size:196K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75617D3, HUFA75617D3S Data Sheet December 2001 16A, 100V, 0.090 Ohm, N-Channel, UltraFET® Power MOSFETs Packaging JEDEC TO-251AA JEDEC TO-252AA Features • Ultra Low On-Resistance SOURCE DRAIN DRAIN - rDS(ON) = 0.090Ω, VGS = 10V GATE (FLANGE) • Simulation Models - Temperature Compensated PSPICE® and SABER™ GATE Electrical Models DRAIN SOURCE - Spice and SABER

 7.5. hufa75637p3 hufa75637s3s hufa75637s3st.pdf Size:200K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75637P3, HUFA75637S3S Data Sheet December 2001 44A, 100V, 0.030 Ohm, N-Channel, UltraFET® Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB Features SOURCE DRAIN DRAIN • Ultra Low On-Resistance (FLANGE) GATE - rDS(ON) = 0.030Ω, VGS = 10V GATE • Simulation Models SOURCE - Temperature Compensated PSPICE® and SABER™ Electrical Models DRAIN (FLANGE) - Spice a

7.6. hufa75639g3 hufa75639p3 hufa75639s3s.pdf Size:221K _fairchild_semi

HUFA75645S3S
HUFA75645S3S

HUFA75639G3, HUFA75639P3, HUFA75639S3S Data Sheet December 2001 56A, 100V, 0.025 Ohm, N-Channel Features UltraFET Power MOSFETs • 56A, 100V These N-Channel power MOSFETs • Simulation Models are manufactured using the - Temperature Compensated PSPICE® and SABER™ innovative UltraFET® process. This Electrical Models advanced process technology - Spice and Saber Thermal Imp

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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