HPW750N20SPA Specs and Replacement
Type Designator: HPW750N20SPA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 200 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 420 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: TO-247AC
HPW750N20SPA substitution
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HPW750N20SPA datasheet
hpw750n20spa.pdf
HAOHAI ELECTRONICS HPW750N20SPA Product Summary 35A, 200V VDS 200 V N-CHANNEL POWER MOSFET RDS(ON) Max. 75 m Features Advanced process technology ID 35 A Ultra low On-Resistance 175 OperatingTemperature Fast Switching 2.Drain RepetitiveAvalancheAllowed up toTjmax Lead-Free 1.Gate 1 2 TO-247AC 3 3.Source ORDERING INFORMATION Pin Assignment Packing Order Number P... See More ⇒
Detailed specifications: HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA , 2SK3878 , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G , NCE025N30K , NCE035N30G .
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