All MOSFET. HPW750N20SPA Datasheet

 

HPW750N20SPA Datasheet and Replacement


   Type Designator: HPW750N20SPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-247AC
 

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HPW750N20SPA Datasheet (PDF)

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HPW750N20SPA

HAOHAI ELECTRONICS HPW750N20SPAProduct Summary35A, 200VVDS200 VN-CHANNEL POWER MOSFETRDS(ON) Max.75 mFeaturesAdvanced process technologyID35 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free1.Gate12TO-247AC33.SourceORDERING INFORMATIONPin AssignmentPackingOrder Number P

Datasheet: HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA , IRFP260 , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G , NCE025N30K , NCE035N30G .

History: IPI100N08N3G

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