All MOSFET. HPW750N20SPA Datasheet

 

HPW750N20SPA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPW750N20SPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 200 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO-247AC

 HPW750N20SPA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPW750N20SPA Datasheet (PDF)

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 hpw750n20spa.pdf

HPW750N20SPA HPW750N20SPA

HAOHAI ELECTRONICS HPW750N20SPAProduct Summary35A, 200VVDS200 VN-CHANNEL POWER MOSFETRDS(ON) Max.75 mFeaturesAdvanced process technologyID35 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free1.Gate12TO-247AC33.SourceORDERING INFORMATIONPin AssignmentPackingOrder Number P

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