NCE035N30G Datasheet. Specs and Replacement

Type Designator: NCE035N30G  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 65 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 352 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm

Package: DFN5X6-8L

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NCE035N30G datasheet

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NCE035N30G

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NCE035N30G

NCE035N30K http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE035N30K uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =30V,I =105A DS(ON) DS D be used in a wide variety of applications. R =3.0 m (typical) @ V =10V DS(ON) GS R =5.2 m (typical) @ V =4.5V Application DS(ON) GS ... See More ⇒

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NCE035N30G

http //www.ncepower.com NCE035P40GU NCE P-Channel Enhancement Mode Power MOSFET Description General Features The NCE035P40GU uses advanced trench technology and V =-40V,I =-130A DS D design to provide excellent R with low gate charge. It R ... See More ⇒

Detailed specifications: HPW750N20SPA, HQB7N65C, HQF7N65C, IRFD24N, NCE01ND03S, NCE020N30K, NCE025N30G, NCE025N30K, 13N50, NCE035N30K, NCE042N30K, NCE048N30Q, NCE1220SP, NCE1227SP, NCE1230SP, NCE18ND11U, NCE2004NE

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