All MOSFET. NCE035N30G Datasheet

 

NCE035N30G Datasheet and Replacement


   Type Designator: NCE035N30G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 65 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 352 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: DFN5X6-8L
 

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NCE035N30G Datasheet (PDF)

 ..1. Size:751K  ncepower
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NCE035N30G

NCE035N30Ghttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE025N30G uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =100ADS(ON) DS Dbe used in a wide variety of applications. R =3.0m (typical) @ V =10VDS(ON) GSR =5.2m (typical) @ V =4.5VApplication DS(ON) GS

 5.1. Size:754K  ncepower
nce035n30k.pdf pdf_icon

NCE035N30G

NCE035N30Khttp://www.ncepower.comNCE N-Channel Enhancement Mode Power MOSFETDescriptionThe NCE035N30K uses advanced trench technology andGeneral Featuresdesign to provide excellent R with low gate charge. It can V =30V,I =105ADS(ON) DS Dbe used in a wide variety of applications. R =3.0 m (typical) @ V =10VDS(ON) GSR =5.2 m (typical) @ V =4.5VApplication DS(ON) GS

 8.1. Size:639K  ncepower
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NCE035N30G

http://www.ncepower.comNCE035P40GUNCE P-Channel Enhancement Mode Power MOSFETDescription General FeaturesThe NCE035P40GU uses advanced trench technology and V =-40V,I =-130ADS Ddesign to provide excellent R with low gate charge. It R

Datasheet: HPW750N20SPA , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G , NCE025N30K , 8205A , NCE035N30K , NCE042N30K , NCE048N30Q , NCE1220SP , NCE1227SP , NCE1230SP , NCE18ND11U , NCE2004NE .

History: RUH30120M-C | WMN90R260S | SQ1912EH | VNT008D | RU7080R | FTA04N60A | SL12N10

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