NCEA2309 Specs and Replacement
Type Designator: NCEA2309
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 19.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: SOT-23
NCEA2309 substitution
- MOSFET ⓘ Cross-Reference Search
NCEA2309 datasheet
ncea2301.pdf
http //www.ncepower.com NCEA2301 NCE P-Channel Enhancement Mode Power MOSFET Description The NCEA2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -20V,I = -3A DS D R ... See More ⇒
Detailed specifications: NCE65NF130T, NCE65NF130V, NCE70N290T, NCE70N380T, NCE8205B, NCE8205T, NCE8601B, NCE8651Q, 20N60, NCEA75H25, NCEAP020N60GU, NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL, NCEP008NH40SL, NCEP013NH40GU
Keywords - NCEA2309 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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