NCES075R026T4 PDF Specs and Replacement
Type Designator: NCES075R026T4
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 151 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO-247-4L
NCES075R026T4 substitution
NCES075R026T4 PDF Specs
nces075r026t4.pdf
PbFree Product NCES075R026T4 750V, 56A, N-channel SiC power MOSFET General Description NCES075R026T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-... See More ⇒
Detailed specifications: NCEP023NH85AGU , NCEP023NH85GU , NCEP1580F , NCEP40ND80G , NCEP40T14A , NCEP60ND30AG , NCEP60ND60G , NCES075R026T , IRF630 , NCES120P035T4 , NCES120P075T4 , NCES120R018T4 , BL10N40-A , BL10N40-D , BL10N40-P , BL10N40-U , BL10N60-A .
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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