All MOSFET. NCES075R026T4 Datasheet

 

NCES075R026T4 Datasheet and Replacement


   Type Designator: NCES075R026T4
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 750 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.8 V
   |Id| ⓘ - Maximum Drain Current: 56 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 94 nC
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 151 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
   Package: TO-247-4L
 

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NCES075R026T4 Datasheet (PDF)

 ..1. Size:801K  ncepower
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NCES075R026T4

PbFree ProductNCES075R026T4750V, 56A, N-channel SiC power MOSFETGeneral Description:NCES075R026T4 is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time. This is a 4-pinpackage type with a driver source terminal that can maximize the high-

 2.1. Size:791K  ncepower
 nces075r026t.pdf pdf_icon

NCES075R026T4

PbFree ProductNCES075R026T750V, 56A, N-channel SiC power MOSFETGeneral Description:NCES075R026T is a SiC MOSFET that contributes to miniaturization and lowpower consumption of applications. This product achieves industry-leading lowon-resistance without sacrificing short-circuit withstand time.Features Low on-resistance Fast switching speed Fast reverse recovery

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