NCES075R026T4 Datasheet. Specs and Replacement
Type Designator: NCES075R026T4 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 176 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 750 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 21 V
|Id| ⓘ - Maximum Drain Current: 56 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 151 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.034 Ohm
Package: TO-247-4L
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NCES075R026T4 substitution
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NCES075R026T4 datasheet
nces075r026t4.pdf
PbFree Product NCES075R026T4 750V, 56A, N-channel SiC power MOSFET General Description NCES075R026T4 is a SiC MOSFET that contributes to miniaturization and low power consumption of applications. This product achieves industry-leading low on-resistance without sacrificing short-circuit withstand time. This is a 4-pin package type with a driver source terminal that can maximize the high-... See More ⇒
Detailed specifications: NCEP023NH85AGU, NCEP023NH85GU, NCEP1580F, NCEP40ND80G, NCEP40T14A, NCEP60ND30AG, NCEP60ND60G, NCES075R026T, IRFP250N, NCES120P035T4, NCES120P075T4, NCES120R018T4, BL10N40-A, BL10N40-D, BL10N40-P, BL10N40-U, BL10N60-A
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