FQH8N100C MOSFET Datasheet: N-Ch, 1000V, 8A. Full specification with pinout and replacement list

FQH8N100C Specs and Replacement

Type Designator: FQH8N100C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 225 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm

Package: TO247 TO3P TO3PF

FQH8N100C substitution

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FQH8N100C datasheet

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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TMF085 , FQD9N25 , FQD9N25TMF085 , FQH44N10 , FDS4480 , IRF540N , FQI13N50C , FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C .