All MOSFET. FQH8N100C Datasheet


FQH8N100C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQH8N100C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 225 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 53 nC

Maximum Drain-Source On-State Resistance (Rds): 1.45 Ohm

Package: TO247, TO3P, TO3PF

FQH8N100C Transistor Equivalent Substitute - MOSFET Cross-Reference Search


FQH8N100C Datasheet (PDF)

0.1. fqh8n100c.pdf Size:991K _fairchild_semi


March 2008 ® QFET FQH8N100C 1000V N-Channel MOSFET Features Description • 8A, 1000V, RDS(on) = 1.45Ω @VGS = 10 V These N-Channel enhancement mode power field effect • Low gate charge (typical 53nC) transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low Crss (typical 16pF) This advanced technology has been especially tailored to

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