All MOSFET. FQH8N100C Datasheet

 

FQH8N100C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQH8N100C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 225 W

Maximum Drain-Source Voltage |Vds|: 1000 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 53 nC

Maximum Drain-Source On-State Resistance (Rds): 1.45 Ohm

Package: TO247 TO3P TO3PF

FQH8N100C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQH8N100C Datasheet (PDF)

0.1. fqh8n100c.pdf Size:991K _fairchild_semi

FQH8N100C
FQH8N100C

March 2008 QFETFQH8N100C1000V N-Channel MOSFETFeatures Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 53nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss (typical 16pF)This advanced technology has been especially tailored to

Datasheet: FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TM_F085 , FQD9N25 , FQD9N25TM_F085 , FQH44N10 , FDS4480 , BS170 , FQI13N50C , FQI27N25 , FQI27N25TU_F085 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C .

 

 
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