All MOSFET. FQH8N100C Datasheet

 

FQH8N100C Datasheet and Replacement


   Type Designator: FQH8N100C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 225 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1000 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.45 Ohm
   Package: TO247 TO3P TO3PF
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FQH8N100C Datasheet (PDF)

 ..1. Size:991K  fairchild semi
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FQH8N100C

March 2008 QFETFQH8N100C1000V N-Channel MOSFETFeatures Description 8A, 1000V, RDS(on) = 1.45 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge (typical 53nC) transistors are produced using Fairchilds proprietary, planar stripe, DMOS technology. Low Crss (typical 16pF)This advanced technology has been especially tailored to

 ..2. Size:1236K  onsemi
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FQH8N100C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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