BL59N30-W Datasheet. Specs and Replacement

Type Designator: BL59N30-W  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 420 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 300 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 59 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 550 nS

Cossⓘ - Output Capacitance: 895 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm

Package: TO-3PN

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BL59N30-W datasheet

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BL59N30-W

BL59N30 Power MOSFET 1 Description Step-Down Converter BL59N30, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

Detailed specifications: BL4N80K-D, BL4N80K-P, BL4N80K-U, BL4N80-P, BL4N80-U, BL50N30-F, BL50N30-W, BL59N30-F, SI2302, BL5N135-A, BL5N135-F, BL5N135-K, BL5N135-P, BL5N135-W, BL5N50-A, BL5N50-D, BL5N50-P

Keywords - BL59N30-W MOSFET specs

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