BL60N25-W Specs and Replacement

Type Designator: BL60N25-W

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 420 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 305 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm

Package: TO-3PN

BL60N25-W substitution

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BL60N25-W datasheet

 ..1. Size:1413K  belling
 bl60n25-f bl60n25-w.pdf pdf_icon

BL60N25-W

BL60N25 Power MOSFET 1 Description Step-Down Converter BL60N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa... See More ⇒

 9.1. Size:166K  ixys
 ixbl60n360.pdf pdf_icon

BL60N25-W

Advance Technical Information High Voltage, VCES = 3600V IXBL60N360 High Frequency, IC110 = 36A BiMOSFETTM Monolithic VCE(sat) 3.4V Bipolar MOS Transistor (Electrically Isolated Tab) ISOPLUS i5-PakTM Symbol Test Conditions Maximum Ratings VCES TJ = 25 C to 150 C 3600 V VCGR TJ = 25 C to 150 C, RGE = 1M 3600 V G E C VGES Continuous 20 V Isolated... See More ⇒

Detailed specifications: BL5N135-K, BL5N135-P, BL5N135-W, BL5N50-A, BL5N50-D, BL5N50-P, BL5N50-U, BL60N25-F, IRF3205, BL6N120-A, BL6N120-F, BL6N120-K, BL6N120-P, BL6N120-W, BL6N40-A, BL6N40-D, BL6N40-P

Keywords - BL60N25-W MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs