BLC75N120-BG Specs and Replacement

Type Designator: BLC75N120-BG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 187.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17.6 nS

Cossⓘ - Output Capacitance: 70.3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm

Package: TO-263-7L

BLC75N120-BG substitution

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BLC75N120-BG datasheet

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 blc75n120-f blc75n120-z blc75n120-bg.pdf pdf_icon

BLC75N120-BG

BLC75N120 Silicon Carbide Power MOSFET 1 Description Step-Down Converter BLC75N120 is an N-channel enhancement type planar , MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on- resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f... See More ⇒

Detailed specifications: BL9N20-U, BL9N50-A, BL9N50-D, BL9N50-P, BL9N50-U, BL9N90-A, BL9N90-F, BL9N90-W, IRF520, BLC75N120-F, BLC75N120-Z, BLM03N03-D, BLM04N06-B, BLM04N06-P, BLM04N08-B, BLM04N08-P, BLM055N04-D

Keywords - BLC75N120-BG MOSFET specs

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