All MOSFET. BLC75N120-BG Datasheet

 

BLC75N120-BG Datasheet and Replacement


   Type Designator: BLC75N120-BG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 70.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-263-7L
 

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BLC75N120-BG Datasheet (PDF)

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BLC75N120-BG

BLC75N120 Silicon Carbide Power MOSFET 1Description Step-Down Converter BLC75N120 is an N-channel enhancement type planar , MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f

Datasheet: BL9N20-U , BL9N50-A , BL9N50-D , BL9N50-P , BL9N50-U , BL9N90-A , BL9N90-F , BL9N90-W , CS150N03A8 , BLC75N120-F , BLC75N120-Z , BLM03N03-D , BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P , BLM055N04-D .

History: 7N60L-A-TA3 | IXFQ60N60X

Keywords - BLC75N120-BG MOSFET datasheet

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