All MOSFET. BLC75N120-Z Datasheet

 

BLC75N120-Z Datasheet and Replacement


   Type Designator: BLC75N120-Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 187.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17.6 nS
   Cossⓘ - Output Capacitance: 70.3 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO-247-4L
 

 BLC75N120-Z substitution

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BLC75N120-Z Datasheet (PDF)

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BLC75N120-Z

BLC75N120 Silicon Carbide Power MOSFET 1Description Step-Down Converter BLC75N120 is an N-channel enhancement type planar , MOSFET, with the revolutionary semiconductor material - silicon carbide, which has the advantages of low on-resistance, low capacitance and gate charge, and superior switching performance. The device can provide higher efficiency, faster operation f

Datasheet: BL9N50-D , BL9N50-P , BL9N50-U , BL9N90-A , BL9N90-F , BL9N90-W , BLC75N120-BG , BLC75N120-F , IRF2807 , BLM03N03-D , BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P , BLM055N04-D , BLM05N03-D , BLM06N03-D .

History: NVMTS0D6N04C

Keywords - BLC75N120-Z MOSFET datasheet

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