All MOSFET. BLM04N06-P Datasheet

 

BLM04N06-P Datasheet and Replacement


   Type Designator: BLM04N06-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220
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BLM04N06-P Datasheet (PDF)

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BLM04N06-P

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide V = 60V,I = 150A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

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BLM04N06-P

Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N08 uses advanced trench technology to provide V = 80V,I = 200A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: DMP4015SPS | CS20N50ANH | DMNH10H028SCT | SPP17N80C3 | AP01L60AT | CS10N70A8D | IRLS4030

Keywords - BLM04N06-P MOSFET datasheet

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