All MOSFET. BLM04N06-P Datasheet

 

BLM04N06-P Datasheet and Replacement


   Type Designator: BLM04N06-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 150 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220
 

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BLM04N06-P Datasheet (PDF)

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BLM04N06-P

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide V = 60V,I = 150A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

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BLM04N06-P

Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N08 uses advanced trench technology to provide V = 80V,I = 200A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

Datasheet: BL9N90-A , BL9N90-F , BL9N90-W , BLC75N120-BG , BLC75N120-F , BLC75N120-Z , BLM03N03-D , BLM04N06-B , 8N60 , BLM04N08-B , BLM04N08-P , BLM055N04-D , BLM05N03-D , BLM06N03-D , BLM06N10-B , BLM06N10-P , BLM075N04-D .

History: IRFPS59N60C | FQPF50N06 | IRF7807VD1 | BLP05N08G-B | AOTF780A70L | 9N25AF | AOK065A60FD

Keywords - BLM04N06-P MOSFET datasheet

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