All MOSFET. BLM04N06-P Datasheet

 

BLM04N06-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM04N06-P
   Marking Code: M04N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 186 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 760 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TO-220

 BLM04N06-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM04N06-P Datasheet (PDF)

 ..1. Size:1138K  belling
 blm04n06-p blm04n06-b.pdf

BLM04N06-P BLM04N06-P

Green Product BLM04N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N06 uses advanced trench technology to provide V = 60V,I = 150A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

 7.1. Size:829K  belling
 blm04n08-p blm04n08-b.pdf

BLM04N06-P BLM04N06-P

Green Product BLM04N08 80V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM04N08 uses advanced trench technology to provide V = 80V,I = 200A DS Dexcellent R , low gate charge. It can be used in a wide DS(ON)R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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