All MOSFET. BLM06N03-D Datasheet

 

BLM06N03-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM06N03-D
   Marking Code: M06N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 28.3 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252

 BLM06N03-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM06N03-D Datasheet (PDF)

 ..1. Size:495K  belling
 blm06n03-d.pdf

BLM06N03-D BLM06N03-D

BLM06N03 Power MOSFET 1Description Step-Down Converter The BLM06N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 70 A DR .Typ 6.0 m DS(ON)@10V R .Typ 9.5 m DS(ON)@4.5V FEATURES Advanced Trench Technology

 8.1. Size:850K  belling
 blm06n10-p blm06n10-b.pdf

BLM06N03-D BLM06N03-D

Green Product BLM06N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM06N10 uses advanced trench technology to provide V = 100V,I = 140A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: 2SK3435-Z

 

 
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