All MOSFET. BLM06N03-D Datasheet

 

BLM06N03-D Datasheet and Replacement


   Type Designator: BLM06N03-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-252
 

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BLM06N03-D Datasheet (PDF)

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BLM06N03-D

BLM06N03 Power MOSFET 1Description Step-Down Converter The BLM06N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 70 A DR .Typ 6.0 m DS(ON)@10V R .Typ 9.5 m DS(ON)@4.5V FEATURES Advanced Trench Technology

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BLM06N03-D

Green Product BLM06N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM06N10 uses advanced trench technology to provide V = 100V,I = 140A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: BLC75N120-Z , BLM03N03-D , BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P , BLM055N04-D , BLM05N03-D , IRFZ48N , BLM06N10-B , BLM06N10-P , BLM075N04-D , BLM07N06-D , BLM07N06-P , BLM07N20-C , BLM08N06-D , BLM08N06-E .

History: MTM24N50 | AONP36320 | JCS2N60CB | AONR36326C | GSM3407S | 2SK293 | AONR32314

Keywords - BLM06N03-D MOSFET datasheet

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