BLM06N10-P Specs and Replacement

Type Designator: BLM06N10-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 211 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 140 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23 nS

Cossⓘ - Output Capacitance: 770 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm

Package: TO-220

BLM06N10-P substitution

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BLM06N10-P datasheet

 ..1. Size:850K  belling
 blm06n10-p blm06n10-b.pdf pdf_icon

BLM06N10-P

Green Product BLM06N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM06N10 uses advanced trench technology to provide V = 100V,I = 140A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

 8.1. Size:495K  belling
 blm06n03-d.pdf pdf_icon

BLM06N10-P

BLM06N03 Power MOSFET 1 Description Step-Down Converter The BLM06N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DS I 70 A D R .Typ 6.0 m DS(ON)@10V R .Typ 9.5 m DS(ON)@4.5V FEATURES Advanced Trench Technology ... See More ⇒

Detailed specifications: BLM04N06-B, BLM04N06-P, BLM04N08-B, BLM04N08-P, BLM055N04-D, BLM05N03-D, BLM06N03-D, BLM06N10-B, 7N60, BLM075N04-D, BLM07N06-D, BLM07N06-P, BLM07N20-C, BLM08N06-D, BLM08N06-E, BLM08N06-P, BLM08N10-B

Keywords - BLM06N10-P MOSFET specs

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