All MOSFET. BLM06N10-P Datasheet

 

BLM06N10-P Datasheet and Replacement


   Type Designator: BLM06N10-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 211 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 770 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO-220
 

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BLM06N10-P Datasheet (PDF)

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BLM06N10-P

Green Product BLM06N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM06N10 uses advanced trench technology to provide V = 100V,I = 140A DS Dexcellent R , low gate charge. It can be used in a wide R

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BLM06N10-P

BLM06N03 Power MOSFET 1Description Step-Down Converter The BLM06N03 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 30 V DSI 70 A DR .Typ 6.0 m DS(ON)@10V R .Typ 9.5 m DS(ON)@4.5V FEATURES Advanced Trench Technology

Datasheet: BLM04N06-B , BLM04N06-P , BLM04N08-B , BLM04N08-P , BLM055N04-D , BLM05N03-D , BLM06N03-D , BLM06N10-B , MMIS60R580P , BLM075N04-D , BLM07N06-D , BLM07N06-P , BLM07N20-C , BLM08N06-D , BLM08N06-E , BLM08N06-P , BLM08N10-B .

History: MCPF04N65 | AP2761I-A | 2SK295 | TK31N60W | 3SK258 | IRF2807PBF | IRFBE30L

Keywords - BLM06N10-P MOSFET datasheet

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