All MOSFET. BLM07N20-C Datasheet

 

BLM07N20-C Datasheet and Replacement


   Type Designator: BLM07N20-C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 155 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 335 nS
   Cossⓘ - Output Capacitance: 1780 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: TO-264
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BLM07N20-C Datasheet (PDF)

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BLM07N20-C

BLM07N20Power MOSFET1. DescriptionAdvantagesBLM07N20 uses advanced trench technology anddesign to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV 200 VDS@Tj.maxI 155 ADR 6.5 mDS(ON).TypFeatures High power and current handing capability Lead free product

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BLM07N20-C

Green Product BLM07N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM07N06 uses advanced trench technology to provide V = 60V,I = 95A DS Dexcellent R , low gate charge. It can be used in a wide R

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BLM07N20-C

BLM075N04 Power MOSFET 1Description Step-Down Converter The BLM075N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DSI 60 A DR .Typ 5.4 m DS(ON)@10V R .Typ 7.8 m DS(ON)@4.5V FEATURES Advanced Trench Technolog

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History: VBNC1303 | IRFS4010PBF

Keywords - BLM07N20-C MOSFET datasheet

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