BLM07N20-C Specs and Replacement

Type Designator: BLM07N20-C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 500 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 155 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 335 nS

Cossⓘ - Output Capacitance: 1780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO-264

BLM07N20-C substitution

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BLM07N20-C datasheet

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 blm07n20-c.pdf pdf_icon

BLM07N20-C

BLM07N20 Power MOSFET 1. Description Advantages BLM07N20 uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. Key Characteristics Parameter Value Unit V 200 V DS@Tj.max I 155 A D R 6.5 m DS(ON).Typ Features High power and current handing capability Lead free product... See More ⇒

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BLM07N20-C

Green Product BLM07N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM07N06 uses advanced trench technology to provide V = 60V,I = 95A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

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BLM07N20-C

BLM075N04 Power MOSFET 1 Description Step-Down Converter The BLM075N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DS I 60 A D R .Typ 5.4 m DS(ON)@10V R .Typ 7.8 m DS(ON)@4.5V FEATURES Advanced Trench Technolog... See More ⇒

Detailed specifications: BLM055N04-D, BLM05N03-D, BLM06N03-D, BLM06N10-B, BLM06N10-P, BLM075N04-D, BLM07N06-D, BLM07N06-P, IRLB3034, BLM08N06-D, BLM08N06-E, BLM08N06-P, BLM08N10-B, BLM08N10-P, BLM08N68-P, BLM08P02-E, BLM08P02-R

Keywords - BLM07N20-C MOSFET specs

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