BLM07N20-C - аналоги, даташиты, параметры транзистора

BLM07N20-C Datasheet (PDF)

..1. Size:919K belling
blm07n20-c.pdf pdf_icon

BLM07N20Power MOSFET1. DescriptionAdvantagesBLM07N20 uses advanced trench technology anddesign to provide excellent R with low gateDS(ON)charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV 200 VDS@Tj.maxI 155 ADR 6.5 mDS(ON).TypFeatures High power and current handing capability Lead free product

8.1. Size:1125K belling
blm07n06-p blm07n06-d.pdf pdf_icon

Green Product BLM07N06 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM07N06 uses advanced trench technology to provide V = 60V,I = 95A DS Dexcellent R , low gate charge. It can be used in a wide R

9.1. Size:534K belling
blm075n04-d.pdf pdf_icon

BLM075N04 Power MOSFET 1Description Step-Down Converter The BLM075N04 uses advanced trench , technology to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V 40 V DSI 60 A DR .Typ 5.4 m DS(ON)@10V R .Typ 7.8 m DS(ON)@4.5V FEATURES Advanced Trench Technolog

Другие MOSFET... BLM055N04-D , BLM05N03-D , BLM06N03-D , BLM06N10-B , BLM06N10-P , BLM075N04-D , BLM07N06-D , BLM07N06-P , IRLB3034 , BLM08N06-D , BLM08N06-E , BLM08N06-P , BLM08N10-B , BLM08N10-P , BLM08N68-P , BLM08P02-E , BLM08P02-R .