BLM10P03-E MOSFET. Datasheet pdf. Equivalent
Type Designator: BLM10P03-E
Marking Code: M10P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 17 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: SOP-8
BLM10P03-E Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BLM10P03-E Datasheet (PDF)
blm10p03-d blm10p03-e blm10p03-q blm10p03-r.pdf
BLM10P03Power MOSFET1. DescriptionAdvantagesBLM10P03 uses advanced trench technologyand design to provide excellent R with lowDS(ON)gate charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV -30 VDSI -52 AD(TO-252)R 7 mDS(ON)@10V.TypR 10 mDS(ON)@4.5V.TypPin1FeaturesTO-252 Top View SOP-8 Top V
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: MPVW20N50B | IXFZ140N25T | MTN2342N3 | AP9430AGYT-HF | FS10SM-16A | IPB04CN10NG
History: MPVW20N50B | IXFZ140N25T | MTN2342N3 | AP9430AGYT-HF | FS10SM-16A | IPB04CN10NG
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918