All MOSFET. BLM10P03-E Datasheet

 

BLM10P03-E Datasheet and Replacement


   Type Designator: BLM10P03-E
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: SOP-8
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BLM10P03-E Datasheet (PDF)

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BLM10P03-E

BLM10P03Power MOSFET1. DescriptionAdvantagesBLM10P03 uses advanced trench technologyand design to provide excellent R with lowDS(ON)gate charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV -30 VDSI -52 AD(TO-252)R 7 mDS(ON)@10V.TypR 10 mDS(ON)@4.5V.TypPin1FeaturesTO-252 Top View SOP-8 Top V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: VBNC1303 | IRFS4010PBF

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