All MOSFET. BLM22N10-P Datasheet

 

BLM22N10-P Datasheet and Replacement


   Type Designator: BLM22N10-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220
 

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BLM22N10-P Datasheet (PDF)

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BLM22N10-P

Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: BLM12N08-D , BLM12N08-P , BLM12P03-R , BLM14N08-D , BLM14N08-P , BLM16N10-D , BLM16N10-P , BLM22N10-D , IRF640 , BLM30DN06L-E , BLM4407 , BLM80P10-D , BLM80P10-P , BLM8205B , BLM8205E-G , BLM8205E-J , BLP012N08-T .

History: AOT210L

Keywords - BLM22N10-P MOSFET datasheet

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