All MOSFET. BLM22N10-P Datasheet

 

BLM22N10-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM22N10-P
   Marking Code: M22N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 65 nC
   trⓘ - Rise Time: 9 nS
   Cossⓘ - Output Capacitance: 182 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO-220

 BLM22N10-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM22N10-P Datasheet (PDF)

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 blm22n10-p blm22n10-d.pdf

BLM22N10-P BLM22N10-P

Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS Dexcellent R , low gate charge. It can be used in a wide R

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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