BLM22N10-P Specs and Replacement

Type Designator: BLM22N10-P

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 182 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: TO-220

BLM22N10-P substitution

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BLM22N10-P datasheet

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 blm22n10-p blm22n10-d.pdf pdf_icon

BLM22N10-P

Green Product BLM22N10 100V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLM22N10 uses advanced trench technology to provide V = 100V,I = 50A DS D excellent R , low gate charge. It can be used in a wide R ... See More ⇒

Detailed specifications: BLM12N08-D, BLM12N08-P, BLM12P03-R, BLM14N08-D, BLM14N08-P, BLM16N10-D, BLM16N10-P, BLM22N10-D, IRFP460, BLM30DN06L-E, BLM4407, BLM80P10-D, BLM80P10-P, BLM8205B, BLM8205E-G, BLM8205E-J, BLP012N08-T

Keywords - BLM22N10-P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.