All MOSFET. BLM30DN06L-E Datasheet

 

 

BLM30DN06L-E Datasheet and Replacement


   Type Designator: BLM30DN06L-E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8
 

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BLM30DN06L-E Datasheet (PDF)

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BLM30DN06L-E

BLM30DN06LPower MOSFET1. DescriptionAdvantagesBLM30DN06L uses advanced trench technologyand design to provide excellent R with lowDS(ON)gate charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV 60 VDSI 6 ADR 30 mDS(ON)@10V.TypFeatures High power and current handing capability Lead free product

Datasheet: BLM12N08-P , BLM12P03-R , BLM14N08-D , BLM14N08-P , BLM16N10-D , BLM16N10-P , BLM22N10-D , BLM22N10-P , IRFZ44 , BLM4407 , BLM80P10-D , BLM80P10-P , BLM8205B , BLM8205E-G , BLM8205E-J , BLP012N08-T , BLP021N10-T .

History: CS10N80FA9D | 2SK1898

Keywords - BLM30DN06L-E MOSFET datasheet

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