All MOSFET. BLM30DN06L-E Datasheet

 

BLM30DN06L-E MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM30DN06L-E
   Marking Code: M30DN06L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 20 nC
   trⓘ - Rise Time: 6.5 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOP8

 BLM30DN06L-E Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM30DN06L-E Datasheet (PDF)

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 blm30dn06l-e.pdf

BLM30DN06L-E BLM30DN06L-E

BLM30DN06LPower MOSFET1. DescriptionAdvantagesBLM30DN06L uses advanced trench technologyand design to provide excellent R with lowDS(ON)gate charge. It can be used in a wide variety ofapplications.Key CharacteristicsParameter Value UnitV 60 VDSI 6 ADR 30 mDS(ON)@10V.TypFeatures High power and current handing capability Lead free product

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