BLM30DN06L-E Specs and Replacement

Type Designator: BLM30DN06L-E

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.5 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SOP8

BLM30DN06L-E substitution

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BLM30DN06L-E datasheet

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BLM30DN06L-E

BLM30DN06L Power MOSFET 1. Description Advantages BLM30DN06L uses advanced trench technology and design to provide excellent R with low DS(ON) gate charge. It can be used in a wide variety of applications. Key Characteristics Parameter Value Unit V 60 V DS I 6 A D R 30 m DS(ON)@10V .Typ Features High power and current handing capability Lead free product ... See More ⇒

Detailed specifications: BLM12N08-P, BLM12P03-R, BLM14N08-D, BLM14N08-P, BLM16N10-D, BLM16N10-P, BLM22N10-D, BLM22N10-P, IRFZ44, BLM4407, BLM80P10-D, BLM80P10-P, BLM8205B, BLM8205E-G, BLM8205E-J, BLP012N08-T, BLP021N10-T

Keywords - BLM30DN06L-E MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs