All MOSFET. BLM80P10-D Datasheet

 

BLM80P10-D Datasheet and Replacement


   Type Designator: BLM80P10-D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: TO-252
      - MOSFET Cross-Reference Search

 

BLM80P10-D Datasheet (PDF)

 ..1. Size:640K  belling
 blm80p10-d blm80p10-p.pdf pdf_icon

BLM80P10-D

BLM80P10 Power MOSFET 1Description Step-Down Converter The BLM80P10 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -100 V DSI -20 A DR .TYP 80 m DS(ON)@10V FEATURES High power and current handing capability Lead free p

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: LSC65R280HT | IPB22N03S4L-15 | 2SK3700

Keywords - BLM80P10-D MOSFET datasheet

 BLM80P10-D cross reference
 BLM80P10-D equivalent finder
 BLM80P10-D lookup
 BLM80P10-D substitution
 BLM80P10-D replacement

 

 
Back to Top

 


 
.