All MOSFET. BLM80P10-D Datasheet

 

BLM80P10-D Datasheet and Replacement


   Type Designator: BLM80P10-D
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: TO-252
 

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BLM80P10-D Datasheet (PDF)

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BLM80P10-D

BLM80P10 Power MOSFET 1Description Step-Down Converter The BLM80P10 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -100 V DSI -20 A DR .TYP 80 m DS(ON)@10V FEATURES High power and current handing capability Lead free p

Datasheet: BLM14N08-D , BLM14N08-P , BLM16N10-D , BLM16N10-P , BLM22N10-D , BLM22N10-P , BLM30DN06L-E , BLM4407 , IRF1404 , BLM80P10-P , BLM8205B , BLM8205E-G , BLM8205E-J , BLP012N08-T , BLP021N10-T , BLP022N10-BA , BLP023N10-B .

History: IRFD214PBF

Keywords - BLM80P10-D MOSFET datasheet

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