All MOSFET. BLM80P10-D Datasheet

 

BLM80P10-D MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLM80P10-D
   Marking Code: M80P10
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 59.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 55 nC
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 67 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm
   Package: TO-252

 BLM80P10-D Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLM80P10-D Datasheet (PDF)

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 blm80p10-d blm80p10-p.pdf

BLM80P10-D BLM80P10-D

BLM80P10 Power MOSFET 1Description Step-Down Converter The BLM80P10 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -100 V DSI -20 A DR .TYP 80 m DS(ON)@10V FEATURES High power and current handing capability Lead free p

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SIF10N60C

 

 
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