BLM80P10-D Specs and Replacement

Type Designator: BLM80P10-D

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm

Package: TO-252

BLM80P10-D substitution

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BLM80P10-D datasheet

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 blm80p10-d blm80p10-p.pdf pdf_icon

BLM80P10-D

BLM80P10 Power MOSFET 1 Description Step-Down Converter The BLM80P10 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -100 V DS I -20 A D R .TYP 80 m DS(ON)@10V FEATURES High power and current handing capability Lead free p... See More ⇒

Detailed specifications: BLM14N08-D, BLM14N08-P, BLM16N10-D, BLM16N10-P, BLM22N10-D, BLM22N10-P, BLM30DN06L-E, BLM4407, IRF1404, BLM80P10-P, BLM8205B, BLM8205E-G, BLM8205E-J, BLP012N08-T, BLP021N10-T, BLP022N10-BA, BLP023N10-B

Keywords - BLM80P10-D MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.