BLM80P10-P Specs and Replacement

Type Designator: BLM80P10-P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 59.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 67 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.096 Ohm

Package: TO-220

BLM80P10-P substitution

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BLM80P10-P datasheet

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 blm80p10-d blm80p10-p.pdf pdf_icon

BLM80P10-P

BLM80P10 Power MOSFET 1 Description Step-Down Converter The BLM80P10 uses advanced trench technology , to provide excellent RDS(ON), low gate charge. It can be used in a wide variety of applications. KEY CHARACTERISTICS Parameter Value Unit V -100 V DS I -20 A D R .TYP 80 m DS(ON)@10V FEATURES High power and current handing capability Lead free p... See More ⇒

Detailed specifications: BLM14N08-P, BLM16N10-D, BLM16N10-P, BLM22N10-D, BLM22N10-P, BLM30DN06L-E, BLM4407, BLM80P10-D, IRLZ44N, BLM8205B, BLM8205E-G, BLM8205E-J, BLP012N08-T, BLP021N10-T, BLP022N10-BA, BLP023N10-B, BLP023N10-BA

Keywords - BLM80P10-P MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.