All MOSFET. BLP012N08-T Datasheet

 

BLP012N08-T Datasheet and Replacement


   Type Designator: BLP012N08-T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 462.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 360 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 3600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: TOLL8
 

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BLP012N08-T Datasheet (PDF)

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BLP012N08-T

BLP012N08 MOSFET Step-Down Converter , 1Description BLP012N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80

Datasheet: BLM22N10-P , BLM30DN06L-E , BLM4407 , BLM80P10-D , BLM80P10-P , BLM8205B , BLM8205E-G , BLM8205E-J , AO3400 , BLP021N10-T , BLP022N10-BA , BLP023N10-B , BLP023N10-BA , BLP023N10-P , BLP023N10-T , BLP024N10-BA , BLP024N10-T .

History: STB25NM50N-1 | STB25NM60N-1 | IPB024N08N5 | 2N60G-TA3-T | AONS66520 | IRFP27N60K

Keywords - BLP012N08-T MOSFET datasheet

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