All MOSFET. FDB16AN08A0 Datasheet

 

FDB16AN08A0 MOSFET. Datasheet pdf. Equivalent

Type Designator: FDB16AN08A0

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 135 W

Maximum Drain-Source Voltage |Vds|: 75 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 58 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 28 nC

Maximum Drain-Source On-State Resistance (Rds): 0.016 Ohm

Package: TO263_D2PAK

FDB16AN08A0 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FDB16AN08A0 Datasheet (PDF)

1.1. fdp16an08a0 fdb16an08a0.pdf Size:267K _fairchild_semi

FDB16AN08A0
FDB16AN08A0

July 2002 FDP16AN08A0 / FDB16AN08A0 N-Channel PowerTrench MOSFET 75V, 58A, 16m? Features Applications rDS(ON) = 13m? (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capability (Single Pulse and Re

1.2. fdb16an08a0.pdf Size:887K _fairchild_semi

FDB16AN08A0
FDB16AN08A0

November 2013 FDB16AN08A0 N-Channel PowerTrench® MOSFET 75 V, 58 A, 16 mΩ Applications Features • RDS(on) = 13 mΩ (Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • Battery Protection Circuit • QG(tot) = 28 nC (Typ.) @ VGS = 10 V • Motor Drives and Uninterruptible Power Supplies • Low Miller Charge • Low Qrr Body Diode •

 

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