All MOSFET. FDB16AN08A0 Datasheet

 

FDB16AN08A0 Datasheet and Replacement


   Type Designator: FDB16AN08A0
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 135 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 58 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
   Package: TO263 D2PAK
 

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FDB16AN08A0 Datasheet (PDF)

 ..1. Size:887K  fairchild semi
 fdb16an08a0.pdf pdf_icon

FDB16AN08A0

November 2013FDB16AN08A0N-Channel PowerTrench MOSFET 75 V, 58 A, 16 mApplicationsFeatures RDS(on) = 13 m (Typ.) @ VGS = 10 V, ID = 58 A Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit QG(tot) = 28 nC (Typ.) @ VGS = 10 V Motor Drives and Uninterruptible Power Supplies Low Miller Charge Low Qrr Body Diode

 ..2. Size:267K  fairchild semi
 fdp16an08a0 fdb16an08a0.pdf pdf_icon

FDB16AN08A0

July 2002FDP16AN08A0 / FDB16AN08A0N-Channel PowerTrench MOSFET75V, 58A, 16mFeatures Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capab

Datasheet: FDB3652 , FQP11N40C , FDP3632 , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , IRFP260 , FQP13N50 , FQP14N30 , FQP16N25 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 .

Keywords - FDB16AN08A0 MOSFET datasheet

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