FDB16AN08A0 Specs and Replacement
Type Designator: FDB16AN08A0
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 135 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 75 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 58 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.016 Ohm
FDB16AN08A0 substitution
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FDB16AN08A0 datasheet
fdb16an08a0.pdf
November 2013 FDB16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 m Applications Features RDS(on) = 13 m (Typ.) @ VGS = 10 V, ID = 58 A Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit QG(tot) = 28 nC (Typ.) @ VGS = 10 V Motor Drives and Uninterruptible Power Supplies Low Miller Charge Low Qrr Body Diode ... See More ⇒
fdp16an08a0 fdb16an08a0.pdf
July 2002 FDP16AN08A0 / FDB16AN08A0 N-Channel PowerTrench MOSFET 75V, 58A, 16m Features Applications rDS(ON) = 13m (Typ.), VGS = 10V, ID = 58A 42V Automotive Load Control Qg(tot) = 28nC (Typ.), VGS = 10V Starter / Alternator Systems Low Miller Charge Electronic Power Steering Systems Low Qrr Body Diode Electronic Valve Train Systems UIS Capab... See More ⇒
Detailed specifications: FDB3652 , FQP11N40C , FDP3632 , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , AO3401 , FQP13N50 , FQP14N30 , FQP16N25 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 .
History: RF1S9540
Keywords - FDB16AN08A0 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
