All MOSFET. FQP14N30 Datasheet

 

FQP14N30 Datasheet and Replacement


   Type Designator: FQP14N30
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 147 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 300 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 9.1 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 30 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO220
 
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FQP14N30 Datasheet (PDF)

 ..1. Size:728K  fairchild semi
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FQP14N30

April 2000TMQFETQFETQFETQFET 300V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 14.4A, 300V, RDS(on) = 0.29 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 23 pF)This advanced technology has been

Datasheet: FDP3632 , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , 8205A , FQP16N25 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C .

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