All MOSFET. FQP14N30 Datasheet

 

FQP14N30 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP14N30

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 147 W

Maximum Drain-Source Voltage |Vds|: 300 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 9.1 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Maximum Drain-Source On-State Resistance (Rds): 0.29 Ohm

Package: TO220

FQP14N30 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP14N30 Datasheet (PDF)

1.1. fqp14n30.pdf Size:728K _fairchild_semi

FQP14N30
FQP14N30

April 2000 TM QFET QFET QFET QFET 300V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 14.4A, 300V, RDS(on) = 0.29? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC) planar stripe, DMOS technology. Low Crss ( typical 23 pF) This advanced technology has been especially t

Datasheet: FDP3632 , FQP12P20 , FQP13N06L , FQP13N10 , FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , IRFP4227 , FQP16N25 , FQP17N40 , FDD6688 , FQP17P06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C .

 

 
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