All MOSFET. BLP10N20J-B Datasheet

 

BLP10N20J-B Datasheet and Replacement


   Type Designator: BLP10N20J-B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 416.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 137 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-263
 

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BLP10N20J-B Datasheet (PDF)

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BLP10N20J-B

BLP10N20J MOSFET Step-Down Converter 1Description , BLP10N20J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTICS

Datasheet: BLP06N08G-B , BLP06N08G-P , BLP075N10G-B , BLP075N10G-P , BLP08N10G-B , BLP08N10G-D , BLP08N10G-P , BLP08N10G-Q , IRFZ44N , BLP10N20J-P , BLP12N10G-B , BLP12N10G-D , BLP12N10G-E , BLP12N10GL-D , BLP12N10GL-Q , BLP12N10G-P , BLP12N10G-Q .

History: HGB014N08A | SM3402NSQG | AP3A010MT | SI4686DY | LSE60R092GT | 2SK1916 | SUM90N10-8M2P

Keywords - BLP10N20J-B MOSFET datasheet

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