All MOSFET. BLP10N20J-B Datasheet

 

BLP10N20J-B MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP10N20J-B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 137 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 123 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-263

 BLP10N20J-B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP10N20J-B Datasheet (PDF)

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 blp10n20j-b blp10n20j-p.pdf

BLP10N20J-B BLP10N20J-B

BLP10N20J MOSFET Step-Down Converter 1Description , BLP10N20J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTICS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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