BLP10N20J-B Specs and Replacement
Type Designator: BLP10N20J-B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 416.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 137 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 442 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: TO-263
BLP10N20J-B substitution
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BLP10N20J-B datasheet
blp10n20j-b blp10n20j-p.pdf
BLP10N20J MOSFET Step-Down Converter 1 Description , BLP10N20J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTICS ... See More ⇒
Detailed specifications: BLP06N08G-B, BLP06N08G-P, BLP075N10G-B, BLP075N10G-P, BLP08N10G-B, BLP08N10G-D, BLP08N10G-P, BLP08N10G-Q, IRFZ44N, BLP10N20J-P, BLP12N10G-B, BLP12N10G-D, BLP12N10G-E, BLP12N10GL-D, BLP12N10GL-Q, BLP12N10G-P, BLP12N10G-Q
Keywords - BLP10N20J-B MOSFET specs
BLP10N20J-B cross reference
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BLP10N20J-B replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
