All MOSFET. BLP10N20J-P Datasheet

 

BLP10N20J-P MOSFET. Datasheet pdf. Equivalent


   Type Designator: BLP10N20J-P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 416.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 137 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 123 nC
   trⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 442 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: TO-220

 BLP10N20J-P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BLP10N20J-P Datasheet (PDF)

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 blp10n20j-b blp10n20j-p.pdf

BLP10N20J-P BLP10N20J-P

BLP10N20J MOSFET Step-Down Converter 1Description , BLP10N20J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTICS

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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