BLP14N08L-D Datasheet. Specs and Replacement

Type Designator: BLP14N08L-D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 245 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-252

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BLP14N08L-D datasheet

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BLP14N08L-D

BLP14N08L MOSFET , 1 Description BLP14N08L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80 V DSS I 37 A D R 12.5 m DS(on)... See More ⇒

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BLP14N08L-D

BLP14N08L MOSFET , 1 Description BLP14N08L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 80 V DSS I 35 A D R 13.8 m DS(on)... See More ⇒

Detailed specifications: BLP12N10G-B, BLP12N10G-D, BLP12N10G-E, BLP12N10GL-D, BLP12N10GL-Q, BLP12N10G-P, BLP12N10G-Q, BLP12N10G-U, IRFP460, BLP14N08L-Q, BLP20N10L-D, BLP20N10L-Q, BLQM15N06L-D, BLS60R036-F, BLS60R036-W, BLS60R150-A, BLS60R150-F

Keywords - BLP14N08L-D MOSFET specs

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