All MOSFET. BLP20N10L-Q Datasheet

 

BLP20N10L-Q Datasheet and Replacement


   Type Designator: BLP20N10L-Q
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 33.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 29.6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6.3 nS
   Cossⓘ - Output Capacitance: 256 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: PDFN5X6
 

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BLP20N10L-Q Datasheet (PDF)

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BLP20N10L-Q

BLP20N10L MOSFET , 1Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 29.6 A DR 17 m DS(on

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BLP20N10L-Q

BLP20N10L MOSFET , 1Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSSI 30.5 A DR 16 m DS(on

Datasheet: BLP12N10GL-D , BLP12N10GL-Q , BLP12N10G-P , BLP12N10G-Q , BLP12N10G-U , BLP14N08L-D , BLP14N08L-Q , BLP20N10L-D , IRF640N , BLQM15N06L-D , BLS60R036-F , BLS60R036-W , BLS60R150-A , BLS60R150-F , BLS60R150F-A , BLS60R150F-B , BLS60R150F-I .

Keywords - BLP20N10L-Q MOSFET datasheet

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