BLP20N10L-Q Specs and Replacement

Type Designator: BLP20N10L-Q

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 33.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 29.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.3 nS

Cossⓘ - Output Capacitance: 256 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN5X6

BLP20N10L-Q substitution

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BLP20N10L-Q datasheet

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 blp20n10l-q.pdf pdf_icon

BLP20N10L-Q

BLP20N10L MOSFET , 1 Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 29.6 A D R 17 m DS(on... See More ⇒

 4.1. Size:929K  belling
 blp20n10l-d.pdf pdf_icon

BLP20N10L-Q

BLP20N10L MOSFET , 1 Description BLP20N10L, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, and improve switching performance. This is suitable device for LED backlighting and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100 V DSS I 30.5 A D R 16 m DS(on... See More ⇒

Detailed specifications: BLP12N10GL-D, BLP12N10GL-Q, BLP12N10G-P, BLP12N10G-Q, BLP12N10G-U, BLP14N08L-D, BLP14N08L-Q, BLP20N10L-D, IRFB4110, BLQM15N06L-D, BLS60R036-F, BLS60R036-W, BLS60R150-A, BLS60R150-F, BLS60R150F-A, BLS60R150F-B, BLS60R150F-I

Keywords - BLP20N10L-Q MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs