MPGC20R170 Specs and Replacement

Type Designator: MPGC20R170

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 26 nS

Cossⓘ - Output Capacitance: 523 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm

Package: TO-263

MPGC20R170 substitution

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MPGC20R170 datasheet

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 mpgc20r170.pdf pdf_icon

MPGC20R170

MPGC20R170 FEATURES D BV DSS=200V, I D=80A RDS(on) @ 17m (Max) V GS=10V Very low FOM RDS(on) Qg 100% avalanche tested G TO-263 S RoHS compliant APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous Rectification Device Marking and Package Information Device Package Ma... See More ⇒

Detailed specifications: BLS70R600-A, BLS70R600-D, BLS70R600-P, BLS70R600-U, BLS70R900-D, AMPCW120R30CV, AMPCW120R40CU, MPGC15R063, 2N60, MPGJ04R017, MPGJ10R7, MPGJ80R040, MPGP06R030H, MPGP10R033, MPGW20R170, MPSA60M082, MPSW60M082

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