MPGC20R170 MOSFET. Datasheet pdf. Equivalent
Type Designator: MPGC20R170
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 57 nC
trⓘ - Rise Time: 26 nS
Cossⓘ - Output Capacitance: 523 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.017 Ohm
Package: TO-263
MPGC20R170 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MPGC20R170 Datasheet (PDF)
..1. Size:3838K cn marching-power
mpgc20r170.pdf
mpgc20r170.pdf
MPGC20R170FEATURESDBVDSS=200V, ID=80ARDS(on) @ :17m (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested GTO-263S RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS)Uninterruptible Power Supply (UPS) High-Frequency Switching and Synchronous RectificationDevice Marking and Package InformationDevice Package Ma
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
